| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ATP102 |
P-Channel Power MOSFET, -30V, -40A, 18.5mOhm, Single ATPAK |
ON Semiconductor |
| 2 |
ATP104 |
P-Channel Power MOSFET, -30V, -75A, 8.4mOhm, Single ATPAK |
ON Semiconductor |
| 3 |
ELL8TP100MB |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(8mm) |
Panasonic |
| 4 |
ELL8TP101MB |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(8mm) |
Panasonic |
| 5 |
ELL8TP102MB |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(8mm) |
Panasonic |
| 6 |
ELLATP100MB |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(10mm) |
Panasonic |
| 7 |
ELLATP101MB |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(10mm) |
Panasonic |
| 8 |
ELLATP102MB |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(10mm) |
Panasonic |
| 9 |
ELLCTP101MB |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(12mm) |
Panasonic |
| 10 |
ELLCTP102MB |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(12mm) |
Panasonic |
| 11 |
HGTP10N120BN |
35A, 1200V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
| 12 |
HGTP10N120BN |
35A/ 1200V/ NPT Series N-Channel IGBT |
Intersil |
| 13 |
HGTP10N40C1 |
10A/ 12A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 14 |
HGTP10N40C1D |
10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
Intersil |
| 15 |
HGTP10N40E1 |
10A/ 12A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 16 |
HGTP10N40E1D |
10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
Intersil |
| 17 |
HGTP10N40F1D |
10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
Intersil |
| 18 |
HGTP10N50C1 |
10A/ 12A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 19 |
HGTP10N50C1D |
10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
Intersil |
| 20 |
HGTP10N50E1 |
10A/ 12A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 21 |
HGTP10N50E1D |
10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
Intersil |
| 22 |
HGTP10N50F1D |
10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
Intersil |
| 23 |
K6R4016C1D-TP10 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 24 |
MAX6505UTP100+ |
Dual Trip SOT Temperature Switches |
MAXIM - Dallas Semiconductor |
| 25 |
MAX6505UTP100+T |
Dual Trip SOT Temperature Switches |
MAXIM - Dallas Semiconductor |
| 26 |
MAX6505UTP100-T |
Trip point 100, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
| 27 |
MAX6505UTP105+ |
Dual Trip SOT Temperature Switches |
MAXIM - Dallas Semiconductor |
| 28 |
MAX6505UTP105+T |
Dual Trip SOT Temperature Switches |
MAXIM - Dallas Semiconductor |
| 29 |
MAX6505UTP105-T |
Trip point 105, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
| 30 |
MAX6506UTP100-T |
Trip point 100, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
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