| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ATP212 |
N-Channel Power MOSFET, 60V, 35A, 23mOhm, Single ATPAK |
ON Semiconductor |
| 2 |
ATP213 |
N-Channel Power MOSFET, 60V, 50A, 16mOhm, Single ATPAK |
ON Semiconductor |
| 3 |
ATP216 |
N-Channel Power MOSFET, 50V, 35A, 23mOhm, Single ATPAK |
ON Semiconductor |
| 4 |
ATP218 |
N-Channel Power MOSFET, 30V, 100A, 3.8mOhm, Single ATPAK |
ON Semiconductor |
| 5 |
HR21-27TP21 |
CIRCULAR WATER-PROOF CONNECTORS FOR OUTPUT USE |
Hirose Electric |
| 6 |
STP210N75F6 |
N-channel 75 V, 3 mOhm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
| 7 |
STP210NF02 |
N-CHANNEL 20V - 0.0026 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET |
SGS Thomson Microelectronics |
| 8 |
STP210NF02 |
N-CHANNEL 20V - 0.0026 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET |
ST Microelectronics |
| 9 |
STP21N05L |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 10 |
STP21N05L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 11 |
STP21N05L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 12 |
STP21N05LFI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 13 |
STP21N05LFI |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 14 |
STP21N05LFI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 15 |
STP21N06L |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 16 |
STP21N06L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 17 |
STP21N06L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 18 |
STP21N06LFI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 19 |
STP21N06LFI |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 20 |
STP21N06LFI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 21 |
STP21N65M5 |
N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-220 |
ST Microelectronics |
| 22 |
STP21N90K5 |
N-channel 900 V, 0.25 Ohm, 18.5 A TO-220 Zener-protected SuperMESH(TM) 5 Power MOSFET |
ST Microelectronics |
| 23 |
STP21NM60ND |
N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-220 package |
ST Microelectronics |
| 24 |
TP2104 |
P-Channel Enhancement Mode MOSFETs |
Microchip |
| 25 |
TP2104 |
P-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 26 |
TP2104K1 |
P-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 27 |
TP2104K1-G |
P-Channel Enhancement Mode MOSFETs |
Microchip |
| 28 |
TP2104N3 |
P-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 29 |
TP2104N3-G |
P-Channel Enhancement Mode MOSFETs |
Microchip |
| 30 |
TP2104N3-G-P003 |
P-Channel Enhancement Mode MOSFETs |
Microchip |
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