| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HGTP2N120BN |
12A, 1200V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
| 2 |
HGTP2N120BN |
12A/ 1200V/ NPT Series N-Channel IGBT |
Intersil |
| 3 |
HGTP2N120BND |
12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
Fairchild Semiconductor |
| 4 |
HGTP2N120BND |
12A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
Intersil |
| 5 |
HGTP2N120CN |
13A, 1200V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
| 6 |
HGTP2N120CN |
13A/ 1200V/ NPT Series N-Channel IGBT |
Intersil |
| 7 |
HGTP2N120CND |
13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
Fairchild Semiconductor |
| 8 |
HGTP2N120CND |
13A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
Intersil |
| 9 |
HGTP2N120CNS |
13A, 1200V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
| 10 |
IXTP2N100 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 11 |
IXTP2N80 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 12 |
MTP2N18 |
Trans MOSFET N-CH 180V 3.25A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 13 |
MTP2N20 |
POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
Motorola |
| 14 |
MTP2N20 |
Trans MOSFET N-CH 200V 3.25A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 15 |
MTP2N35 |
N-Channel Power MOSFETs, 2.25A, 350-400V |
Fairchild Semiconductor |
| 16 |
MTP2N35 |
Trans MOSFET N-CH 400V 2A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 17 |
MTP2N40 |
N-Channel Power MOSFETs, 2.25A, 350-400V |
Fairchild Semiconductor |
| 18 |
MTP2N40E |
TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM |
Motorola |
| 19 |
MTP2N40E |
2 Amp TO-220AB, N-Channel, VDSS 400 |
ON Semiconductor |
| 20 |
MTP2N40E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate |
ON Semiconductor |
| 21 |
MTP2N45 |
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V |
Fairchild Semiconductor |
| 22 |
MTP2N50 |
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V |
Fairchild Semiconductor |
| 23 |
MTP2N50E |
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM |
Motorola |
| 24 |
MTP2N60 |
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
Motorola |
| 25 |
MTP2N60E |
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
Motorola |
| 26 |
MTP2N60E |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 27 |
MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate |
ON Semiconductor |
| 28 |
MTP2N80 |
Trans MOSFET N-CH 400V 2A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 29 |
MTP2N85 |
Trans MOSFET N-CH 400V 2A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 30 |
MTP2N90 |
XSTR N-CHL TMOS FET 2A 8OHM 900V TO-220 PKG |
New Jersey Semiconductor |
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