| No. |
Part Name |
Description |
Manufacturer |
| 1 |
MTP3N100 |
N-channel TMOS power FET. 1000 V, 3 A, Rds(on) 4 Ohm. |
Motorola |
| 2 |
MTP3N100E |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM |
Motorola |
| 3 |
MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 4 |
STP3N100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 5 |
STP3N100 |
N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 6 |
STP3N100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 7 |
STP3N100FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 8 |
STP3N100FI |
N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 9 |
STP3N100FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| | | |
