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Datasheets for TP6

Datasheets found :: 191
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 ATP602 N-Channel Power MOSFET, 600V, 5A, 2.7Ohm, ATPAK ON Semiconductor
2 BStP61 Disc thyristor 1100A Siemens
3 BStP6113Y Disc thyristor 1100A 200V Siemens
4 BStP6120Y Disc thyristor 1100A 300V Siemens
5 BStP6126Y Disc thyristor 1100A 400V Siemens
6 BStP6133Y Disc thyristor 1100A 500V Siemens
7 ELL8TP680MB Power Inductors for Consumer - Magnetic shielded Ferrite core type(8mm) Panasonic
8 ELL8TP681MB Power Inductors for Consumer - Magnetic shielded Ferrite core type(8mm) Panasonic
9 ELL8TP6R8NB Power Inductors for Consumer - Magnetic shielded Ferrite core type(8mm) Panasonic
10 ELLATP680MB Power Inductors for Consumer - Magnetic shielded Ferrite core type(10mm) Panasonic
11 ELLATP681MB Power Inductors for Consumer - Magnetic shielded Ferrite core type(10mm) Panasonic
12 ELLATP6R8NB Power Inductors for Consumer - Magnetic shielded Ferrite core type(10mm) Panasonic
13 ELLCTP680MB Power Inductors for Consumer - Magnetic shielded Ferrite core type(12mm) Panasonic
14 ELLCTP681MB Power Inductors for Consumer - Magnetic shielded Ferrite core type(12mm) Panasonic
15 ELLCTP6R8NB Power Inductors for Consumer - Magnetic shielded Ferrite core type(12mm) Panasonic
16 IRAMX30TP60A 30A, 600V Integrated Power Hybrid IC with Open Omitter Pin for Advanced Appliance Motor Drive applications. International Rectifier
17 IRAMX30TP60A-2 30A, 600V Integrated Power Hybrid IC with Open Omitter Pin for Advanced Appliance Motor Drive applications. International Rectifier
18 IXTP62N15P Discrete MOSFETs: Standard N-channel Types IXYS
19 K4S643232E-TP60 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
20 K4S643232F-TP60 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V Samsung Electronic
21 MAX6507UTP64-T Trip temperature 100, 30 mA, dual trip SOT temperature switch MAXIM - Dallas Semiconductor
22 MAX6507UTP69-T Trip temperature 105, 30 mA, dual trip SOT temperature switch MAXIM - Dallas Semiconductor
23 MAX6507UTP6E-T Trip temperature 110, 30 mA, dual trip SOT temperature switch MAXIM - Dallas Semiconductor
24 MAX6508UTP64-T Trip temperature 100, 30 mA, dual trip SOT temperature switch MAXIM - Dallas Semiconductor
25 MAX6508UTP69-T Trip temperature 105, 30 mA, dual trip SOT temperature switch MAXIM - Dallas Semiconductor
26 MAX6508UTP6E-T Trip temperature 110, 30 mA, dual trip SOT temperature switch MAXIM - Dallas Semiconductor
27 MTP60N05 TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM Motorola
28 MTP60N05HDL TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM Motorola
29 MTP60N06 TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM Motorola
30 MTP60N06HD TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM Motorola


Datasheets found :: 191
Page: | 1 | 2 | 3 | 4 | 5 |



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