No. |
Part Name |
Description |
Manufacturer |
1 |
1N3063 |
Extremely fast glass passivated silicon switching diode, marking plain text or color rings yellow-orange-black-green |
Texas Instruments |
2 |
1N3604 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-brown or plain text |
Texas Instruments |
3 |
1N3606 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-orange or plain text |
Texas Instruments |
4 |
1N4009 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-yellow or plain text |
Texas Instruments |
5 |
1N4148 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
6 |
1N4149 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
7 |
1N4151 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-brown or plain text |
Texas Instruments |
8 |
1N4152 |
Silicon epitaxial planar diode for extreme speed switching applications |
AEG-TELEFUNKEN |
9 |
1N4153 |
Silicon epitaxial planar diode for extreme speed switching applications |
AEG-TELEFUNKEN |
10 |
1N4153 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-orange or plain text |
Texas Instruments |
11 |
1N4154 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-yellow or plain text |
Texas Instruments |
12 |
1N4305 |
Extremely fast glass passivated silicon switching diode, marking plain text or color rings yellow-orange-black-green |
Texas Instruments |
13 |
1N4446 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
14 |
1N4447 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
15 |
1N4448 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
16 |
1N4449 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
17 |
1N91 |
Germanium rectifier, extremely low forward voltage drop |
Motorola |
18 |
1N92 |
Germanium rectifier, extremely low forward voltage drop |
Motorola |
19 |
1N93 |
Germanium rectifier, extremely low forward voltage drop |
Motorola |
20 |
2N709 |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
21 |
2N709A |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
22 |
AGP2125K-2.8TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
23 |
AN453 |
HOW THE TDE1897/98 BEHAVE IN EXTREME OVERLOAD CONDITIONS |
SGS Thomson Microelectronics |
24 |
AP2120 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR |
Diodes |
25 |
AP2120N-1.2TRG1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR |
Diodes |
26 |
AP2120N-1.3TRG1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR |
Diodes |
27 |
AP2120N-1.5TRG1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR |
Diodes |
28 |
AP2120N-1.8TRG1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR |
Diodes |
29 |
AP2120N-2.5TRG1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR |
Diodes |
30 |
AP2120N-2.8TRG1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR |
Diodes |
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