No. |
Part Name |
Description |
Manufacturer |
1 |
1N4148 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
2 |
1N4149 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
3 |
1N4152 |
Silicon epitaxial planar diode for extreme speed switching applications |
AEG-TELEFUNKEN |
4 |
1N4153 |
Silicon epitaxial planar diode for extreme speed switching applications |
AEG-TELEFUNKEN |
5 |
1N4446 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
6 |
1N4447 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
7 |
1N4448 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
8 |
1N4449 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
9 |
AN453 |
HOW THE TDE1897/98 BEHAVE IN EXTREME OVERLOAD CONDITIONS |
SGS Thomson Microelectronics |
10 |
BAT60A |
Schottky Diodes - Silicon AF Schottky rectifier diode with extreme low V_F drop |
Infineon |
11 |
BAT60A |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply |
Siemens |
12 |
BAX25 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
13 |
BAX26 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
14 |
BAX27 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
15 |
BCR400R |
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
Siemens |
16 |
BCR400W |
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
Siemens |
17 |
CY7C1262XV18-366BZXC |
36-Mbit QDR� II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
18 |
CY7C1262XV18-450BZXC |
36-Mbit QDR� II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
19 |
CY7C1263XV18-600BZXC |
36-Mbit QDR� II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
20 |
CY7C1263XV18-633BZXC |
36-Mbit QDR� II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
21 |
CY7C1264XV18-366BZXC |
36-Mbit QDR� II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
22 |
CY7C1264XV18-450BZXC |
36-Mbit QDR� II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
23 |
CY7C1265XV18-600BZXC |
36-Mbit QDR� II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
24 |
CY7C1265XV18-633BZXC |
36-Mbit QDR� II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
25 |
CY7C1268XV18-600BZXC |
36-Mbit DDR II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
26 |
CY7C1268XV18-633BZXC |
36-Mbit DDR II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
27 |
CY7C1270XV18-600BZXC |
36-Mbit DDR II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
28 |
CY7C1270XV18-633BZXC |
36-Mbit DDR II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
29 |
CY7C1562XV18-366BZC |
72-Mbit QDR� II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
30 |
CY7C1562XV18-366BZXC |
72-Mbit QDR� II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
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