| No. |
Part Name |
Description |
Manufacturer |
| 1 |
3N140 |
N-Channel dual-gate silicon-nitride passivated MOS field-effect transistor |
Motorola |
| 2 |
3N155 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 3 |
3N155A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 4 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 5 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 6 |
3N157 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 7 |
3N157A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 8 |
3N158 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 9 |
3N158A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 10 |
AML056P4511 |
Gallium Nitride (GaN) |
Microsemi |
| 11 |
AML1416P4511 |
Gallium Nitride (GaN) |
Microsemi |
| 12 |
AML59P4512 |
Gallium Nitride (GaN) |
Microsemi |
| 13 |
AML618L4011 |
Gallium Nitride (GaN) |
Microsemi |
| 14 |
AML811P5011 |
Gallium Nitride (GaN) |
Microsemi |
| 15 |
AML811P5012 |
Gallium Nitride (GaN) |
Microsemi |
| 16 |
AONV070V65G1 |
Gallium Nitride (GaN) FETs Wide Bandgap (GaN/SiC) |
Alpha & Omega Semiconductor |
| 17 |
BFR90 |
Epitaxial planar NPN transistor, utilizing Planox® silicon nitride, intended for VHF-UHF wide band applications |
SGS-ATES |
| 18 |
MFE3006 |
N-channel dual-gate silicon-nitride passivated MOS field-effect transistor, depletion mode (Type B) |
Motorola |
| 19 |
MFE3007 |
N-Channel Dual-Gate Silicon-Nitride Passivated MOS Field-Effect Transistor Type B, designed for VHF amplifiers and mixer applications |
Motorola |
| 20 |
PTN |
Wraparound Chip Resistors Thin Film Tantalum Nitride |
Vishay |
| 21 |
TVGA9000 |
Low Cost VGA Controller |
Trident |
| 22 |
TVGA9000C |
Low Cost VGA Controller |
Trident |
| 23 |
TVGA9000I |
Low Cost VGA Controller |
Trident |
| 24 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 25 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 26 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 27 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 28 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 29 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 30 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| | | |
