No. |
Part Name |
Description |
Manufacturer |
1 |
BUK9MTT-65PBB |
Dual TrenchPLUS FET Logic Level FET |
NXP Semiconductors |
2 |
HM5117805LTT-6 |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
Elpida Memory |
3 |
HM5117805TT-6 |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
Elpida Memory |
4 |
HM514260CLTT-6 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
5 |
HM514260CLTT-6R |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
6 |
HM514260CTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
7 |
HM514260CTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
8 |
HM514400ALTT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
9 |
HM514400ASLTT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
10 |
HM514400ATT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
11 |
HM514400BLTT-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
12 |
HM514400BTT-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
13 |
HM514400CLTT-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
14 |
HM514400CTT-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
15 |
HM514800CLTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
16 |
HM514800CTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
17 |
HM5164165FLTT-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
18 |
HM5164165FTT-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
19 |
HM5164165LTT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
20 |
HM5164165TT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
21 |
HM5164405FLTT-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
22 |
HM5164405FTT-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
23 |
HM5165165FLTT-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
24 |
HM5165165FTT-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
25 |
HM5165165LTT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
26 |
HM5165165TT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
27 |
HM5165405FLTT-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
28 |
HM5165405FTT-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
29 |
HM51S4260CLTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
30 |
HM51S4260CLTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
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