| No. |
Part Name |
Description |
Manufacturer |
| 1 |
20KTXXX |
Heavy Duty High Voltage Capacitors |
Vishay |
| 2 |
5962D0053601TXX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 3 |
5962D0053602TXX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 4 |
5962D0053603TXX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 5 |
5962D0053604TXX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 6 |
5962D9960701TXX |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 7 |
5962D9960702TXX |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 8 |
5962D9960703TXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 9 |
5962D9960704TXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 10 |
5962L0053601TXX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 11 |
5962L0053602TXX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 12 |
5962L0053603TXX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 13 |
5962L0053604TXX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 14 |
5962L9960701TXX |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 15 |
5962L9960702TXX |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 16 |
5962L9960703TXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 17 |
5962L9960704TXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 18 |
5962P0053601TXX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 19 |
5962P0053602TXX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 20 |
5962P0053603TXX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 21 |
5962P0053604TXX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 22 |
5962P9960701TXX |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 23 |
5962P9960702TXX |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 24 |
5962P9960703TXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 25 |
5962P9960704TXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 26 |
CTXXX |
Power Inductors and Transformers |
Coiltronics |
| 27 |
KA78TXX |
3-Terminal 3A Positive Voltage Regulator |
Fairchild Semiconductor |
| 28 |
M4TXX-BR12 |
TIMEKEEPER SNAPHAT Battery & Crystal |
ST Microelectronics |
| 29 |
M4TXX-BR12SH |
TIMEKEEPER SNAPHAT (Battery & Crystal) |
SGS Thomson Microelectronics |
| 30 |
M4TXX-BR12SH |
TIMEKEEPER SNAPHAT Battery & Crystal |
ST Microelectronics |
| | | |
