No. |
Part Name |
Description |
Manufacturer |
1 |
K6T4016U3C-B |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
2 |
K6T4016U3C-F |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
3 |
K6T4016U3C-RB10 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
4 |
K6T4016U3C-RB70 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
5 |
K6T4016U3C-RB85 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
6 |
K6T4016U3C-RF10 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
7 |
K6T4016U3C-RF70 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
8 |
K6T4016U3C-RF85 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
9 |
K6T4016U3C-TB10 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
10 |
K6T4016U3C-TB70 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
11 |
K6T4016U3C-TB85 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
12 |
K6T4016U3C-TF10 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
13 |
K6T4016U3C-TF70 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
14 |
K6T4016U3C-TF85 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
15 |
MDU3C-100 |
Delay 100 +/-5 ns, triple, HCMOS-interfaced fixed delay line |
Data Delay Devices Inc |
16 |
MDU3C-100A2 |
Delay 100 +/-5 ns, triple, HCMOS-interfaced fixed delay line |
Data Delay Devices Inc |
17 |
MDU3C-100B2 |
Delay 100 +/-5 ns, triple, HCMOS-interfaced fixed delay line |
Data Delay Devices Inc |
18 |
MDU3C-100M |
Delay 100 +/-5 ns, triple, HCMOS-interfaced fixed delay line |
Data Delay Devices Inc |
19 |
MDU3C-100MC2 |
Delay 100 +/-5 ns, triple, HCMOS-interfaced fixed delay line |
Data Delay Devices Inc |
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