| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BFU510 |
NPN SiGe wideband transistor |
Philips |
| 2 |
ERG12SJU510V |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 3 |
ERG1SGU510V |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 4 |
ERG1SJU510V |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 5 |
ERG2SGU510V |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 6 |
ERG2SJU510V |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 7 |
ERG3SGU510V |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 8 |
ERG3SJU510V |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 9 |
MU510 |
POWER RECTIFIERS(5.0A,500-1000V) |
MOSPEC Semiconductor |
| 10 |
SU510 |
Si-npn power switching transistor for use on the 380V network, possibly equivalent QM30DY-2K |
RFT |
| 11 |
TFDU5103 |
Fast Infrared Transceiver Module (MIR, 1.152 Mbit/s) \r\nfor 2.7 V to 5.5 V Operation |
Vishay |
| 12 |
TFDU5103-TR3 |
Fast Infrared Transceiver Module (MIR/ 1.152 Mbit/s) for 2.7 V to 5.5 V Operation |
Vishay |
| 13 |
TFDU5103-TT3 |
Fast Infrared Transceiver Module (MIR/ 1.152 Mbit/s) for 2.7 V to 5.5 V Operation |
Vishay |
| 14 |
TFDU5107 |
Low Profile Transceiver Module for Telecom Applications \r\n9.6 kbit/s to 1.152 Mbit/s Data Transmission Rate |
Vishay |
| 15 |
TFDU5107-TR3 |
Integrated Low Profile Transceiver Module for Telecom Applications |
Vishay |
| 16 |
TFDU5107-TT3 |
Integrated Low Profile Transceiver Module for Telecom Applications |
Vishay |
| | | |
