| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BFU610F |
NPN wideband silicon RF transistor |
NXP Semiconductors |
| 2 |
BGU6101 |
Wideband silicon low-noise amplifier MMIC |
NXP Semiconductors |
| 3 |
BGU6102 |
Wideband silicon low-noise amplifier MMIC |
NXP Semiconductors |
| 4 |
BGU6104 |
Wideband silicon low-noise amplifier MMIC |
NXP Semiconductors |
| 5 |
GBU610 |
Bridge Rectifiers |
Diodes |
| 6 |
GBU610-G |
Bridge Rectifiers, VRRM=1000V, VDC=1000V, I(AV)=6A |
Comchip Technology |
| 7 |
KBU610 |
Silicon Bridge Rectifiers |
Comchip Technology |
| 8 |
KBU610 |
6 AMP SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 9 |
KBU610 |
SINGLE PHASE 6.0 AMPS. SILICON BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 10 |
KBU610 |
6.0A BRIDGE RECTIFIER |
Won-Top Electronics |
| 11 |
KBU610-G |
Bridge Rectifiers, VRRM=1000V, VDC=1000V, I(AV)=6A |
Comchip Technology |
| 12 |
KBU610G |
SINGLE PHASE 6.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 13 |
KBU610G |
6.0A GLASS PASSIVATED BRIDGE RECTIFIER |
Won-Top Electronics |
| 14 |
KU611 |
NPN transistor for switching and control circuit |
Tesla Elektronicke |
| 15 |
KU612 |
NPN transistor for switching and control circuit |
Tesla Elektronicke |
| 16 |
PU61C56 |
Power Transistor Array (F-MOS FETs) - Silicon N-Channel Power F-MOS (with built-in zener diode) |
Panasonic |
| 17 |
STM8T141AU61T |
Single-channel capacitive sensor for touch or proximity detection with shielded sensing electrode |
ST Microelectronics |
| 18 |
TFDU6100E |
2.7-5.5V Fast Infrared Transceiver Module Family |
Vishay |
| 19 |
TFDU6101E |
Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
Vishay |
| 20 |
TFDU6101E-TR4 |
Fast Infrared Transceiver Module Family (FIR/ 4 Mbit/s) for 2.6 V to 5.5 V Operation |
Vishay |
| 21 |
TFDU6101E-TT4 |
Fast Infrared Transceiver Module Family (FIR/ 4 Mbit/s) for 2.6 V to 5.5 V Operation |
Vishay |
| 22 |
TFDU6101E. |
Infrared transceivers |
Vishay |
| 23 |
TFDU6102 |
Fast Infrared Transceiver Module (FIR, 4 Mbit/s) \r\nfor 2.7 V to 5.5 V Operation |
Vishay |
| 24 |
TFDU6102E |
Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
Vishay |
| 25 |
TFDU6102E-TR3 |
Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
Vishay |
| 26 |
TFDU6102E-TT3 |
Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
Vishay |
| 27 |
TFDU6102F |
Fast Infrared Transceiver Module (FIR, 4 Mbit/s) for 2.7 V to 5.25 V Operation |
Vishay |
| 28 |
TFDU6108 |
Fast Infrared Transceiver Module (4 Mbit/s), IrDA® Serial Interface Compatible, 2.7 V to 5.5 V Supply Voltage Range |
Vishay |
| 29 |
TFDU6108-TR3 |
Fast Infrared Transceiver Module (4 Mbit/s), IrDA Serial Interface Compatible, 2.7 V to 5.5 V Supply Voltage Range |
Vishay |
| 30 |
TFDU6108-TT3 |
Fast Infrared Transceiver Module (4 Mbit/s), IrDA Serial Interface Compatible, 2.7 V to 5.5 V Supply Voltage Range |
Vishay |
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