| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FDU6N25 |
N-Channel UniFETTM MOSFET 250V, 4.4A, 1.1? |
Fairchild Semiconductor |
| 2 |
FDU6N50 |
Discrete MOSFET |
Fairchild Semiconductor |
| 3 |
FQU6N15 |
150V N-Channel MOSFET |
Fairchild Semiconductor |
| 4 |
FQU6N25 |
250V N-Channel MOSFET |
Fairchild Semiconductor |
| 5 |
FQU6N25TU |
250V N-Channel QFET |
Fairchild Semiconductor |
| 6 |
FQU6N40 |
400V N-Channel MOSFET |
Fairchild Semiconductor |
| 7 |
FQU6N40C |
400V N-Channel Advance QFET C-Series |
Fairchild Semiconductor |
| 8 |
FQU6N40CTU |
400V N-Channel Advance QFET C-Series |
Fairchild Semiconductor |
| 9 |
FQU6N50C |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology |
Fairchild Semiconductor |
| 10 |
SGU6N60UF |
Ultra-Fast IGBT |
Fairchild Semiconductor |
| 11 |
STU6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package |
ST Microelectronics |
| 12 |
STU6N62K3 |
N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in IPAK |
ST Microelectronics |
| 13 |
STU6N65K3 |
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in IPAK package |
ST Microelectronics |
| 14 |
STU6N65M2 |
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package |
ST Microelectronics |
| 15 |
STU6N95K5 |
N-channel 950 V, 1 Ohm typ., 9 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package |
ST Microelectronics |
| 16 |
STU6NA100 |
N - CHANNEL 1000V - 1.45W - 6A - Max220, FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 17 |
STU6NA100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 18 |
STU6NA100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 19 |
STU6NA90 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 20 |
STU6NA90 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 21 |
STU6NA90 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 22 |
STU6NF10 |
N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET͐2;2; Power MOSFET |
ST Microelectronics |
| | | |
