No. |
Part Name |
Description |
Manufacturer |
1 |
2N1185 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
2 |
2N1186 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
3 |
2N1187 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
4 |
2N1188 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
5 |
2N1189 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
6 |
2N1190 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
7 |
2N1191 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
8 |
2N1192 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
9 |
2N1193 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
10 |
2N1194 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
11 |
2N319 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
12 |
2N320 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
13 |
2N321 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
14 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
15 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
16 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
17 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
18 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
19 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
20 |
2SA1316 |
Transistor Silicon PNP Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers |
TOSHIBA |
21 |
2SA1349 |
TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS. RECOMMENDED FOR CASCADE/ CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE/ MAIN AMPL |
TOSHIBA |
22 |
2SA1964 |
For audio amplifier output stages/TV velocity modulation (-160V/ -1.5A) |
ROHM |
23 |
2SA493-GR |
PNP transistor for low noise audio amplifier applications |
TOSHIBA |
24 |
2SA493-Y |
PNP transistor for low noise audio amplifier applications |
TOSHIBA |
25 |
2SA493G |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
26 |
2SA494 |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
27 |
2SA763 |
PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
28 |
2SA941 |
120V PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
29 |
2SA942 |
90V PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
30 |
2SA949 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AUDIO AMPLIFIER AND HIGH VOLTAGE SWITCHING APPLICATIONS |
TOSHIBA |
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