No. |
Part Name |
Description |
Manufacturer |
1 |
0105-100 |
100 W, 28 V, 100-500 MHz, UHF balanced transistor |
Acrian |
2 |
0105-100-2 |
100 W, 28 V, 100-500 MHz, UHF balanced transistor |
Acrian |
3 |
0105-100-3 |
100 W, 28 V, 100-500 MHz, UHF balanced transistor |
Acrian |
4 |
0105-12 |
12 W, 28 V, 100-500 MHz, UHF balanced transistor |
Acrian |
5 |
0105-12-2 |
12 W, 28 V, 100-500 MHz, UHF balanced transistor |
Acrian |
6 |
0105-125 |
500MHz 28V 100W NPN RF power transistor for wideband VHF-UHF class C applications |
SGS Thomson Microelectronics |
7 |
0105-50 |
50 W, 28 V, 100-500 MHz, UHF balanced transistor |
Acrian |
8 |
0105-50-2 |
50 W, 28 V, 100-500 MHz, UHF balanced transistor |
Acrian |
9 |
0204-125 |
RF & MICROWAVE TRANSISTORS VHF/UHF APPLICATIONS |
ST Microelectronics |
10 |
0510-10 |
20 W, 28 V, 500-1000 MHz, UHF emitter silicon power transistor |
Acrian |
11 |
0510-10-2 |
20 W, 28 V, 500-1000 MHz, UHF emitter silicon power transistor |
Acrian |
12 |
0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
13 |
102 |
0.5/2.5 GHz UHF LO BUFFER AMPLIFIER |
SGS Thomson Microelectronics |
14 |
1N134 |
UHF Detector f=400 MHz |
Motorola |
15 |
1N147 |
Germanium UHF Mixer f=900 MHz NF=10 to 9.0 dB |
Motorola |
16 |
1N147A |
Germanium UHF Mixer f=900 MHz NF=10 to 9.0 dB |
Motorola |
17 |
1N173A |
Silicon UHF Mixer - to 1,000 MHz NF=13 dB |
Motorola |
18 |
1N285 |
UHF Mixer NF=12.5 dB |
Motorola |
19 |
1N830 |
Silicon Micro-min. UHF Detector |
Motorola |
20 |
1N830A |
Silicon Micro-min. UHF Detector |
Motorola |
21 |
1S1820 |
Silicon Schottky Barrier Diode, used for UHF TV Tuner Mixer |
Hitachi Semiconductor |
22 |
1S2187 |
Silicon epitaxial schottky barrier mixer diode, UHF Mixer Application |
TOSHIBA |
23 |
1S750 |
Silicon Point Contact Epitaxial, intended for use in UHF Tuner Mixer |
Hitachi Semiconductor |
24 |
1SS16 |
Silicon UHF Detector & Mixer Diode |
NEC |
25 |
1SS237 |
UHF Detector & Mixer Diode |
NEC |
26 |
1SS237(1) |
UHF Detector & Mixer Diode |
NEC |
27 |
1SS242 |
Silicon Epitaxial Schottky Barrier Type Diode for UHF band mixer applications, marking S2 |
TOSHIBA |
28 |
1SS271 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE VHF~UHF MIXER APPLICATION |
TOSHIBA |
29 |
1SS295 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONS |
TOSHIBA |
30 |
1SS315 |
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer Applications |
TOSHIBA |
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