| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
| 2 |
10160 |
Checker-generator circuit 12-BIT parity |
Signetics |
| 3 |
10160F |
Checker-generator circuit 12-BIT parity |
Signetics |
| 4 |
10170 |
9-BIT parity circuit (with 2 carry inputs) |
Signetics |
| 5 |
10170F |
9-BIT parity circuit (with 2 carry inputs) |
Signetics |
| 6 |
10B-2001 |
Military-Grade 10BASE-T interface module |
Aeroflex Circuit Technology |
| 7 |
1203P60 |
PWM Current-Mode Controller for Universal Off-Line Supplies Featuring Standby and Short Circuit |
ON Semiconductor |
| 8 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 9 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 10 |
1775 |
Universal MacAir/1553 Dumb RTU Hybrid PRELIMINARY DATA SHEET |
Aeroflex Circuit Technology |
| 11 |
1837 |
2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 12 |
1837 |
2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 13 |
1838 |
2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 14 |
1838 |
2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 15 |
1N34AH |
Germanium Point Contact for AM detector or logical circuit |
Hitachi Semiconductor |
| 16 |
1N38AH |
Germanium Point Contact for Limitter Circuit, Small Capacitive Rectifier |
Hitachi Semiconductor |
| 17 |
1N4885 |
Silicon varactor diode for use in high efficiency multiplier circuits |
Mullard |
| 18 |
1N5711WS-7 |
70V; 15mA surface mount schottky barrier diode. Ideally suited for automatic insertion |
Diodes |
| 19 |
1N5829 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 20V. Vrsm = 24V. |
USHA India LTD |
| 20 |
1N5830 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. |
USHA India LTD |
| 21 |
1N5831 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. |
USHA India LTD |
| 22 |
1N5832 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 20V. Vrsm = 24V. |
USHA India LTD |
| 23 |
1N5833 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. |
USHA India LTD |
| 24 |
1N5834 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. |
USHA India LTD |
| 25 |
1N60H |
Germanium Point Contact for Logical Circuit, Video, AM, FM Detector |
Hitachi Semiconductor |
| 26 |
1S1579 |
Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad |
TOSHIBA |
| 27 |
1S1580 |
Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad |
TOSHIBA |
| 28 |
1S1650 |
Silicon planar variable capacitance diode, suitable for Radio Tunner, Multiplier and Oscillator |
TOSHIBA |
| 29 |
1S1651 |
Silicon planar variable capacitance diode, suitable for Radio Tunner, Multiplier and Oscillator |
TOSHIBA |
| 30 |
1S1837 |
Silicon diffused junction rectifier, High Voltage Rectifier for Color Television Receivers Application (Doubler Circuits) |
TOSHIBA |
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