| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1242 (RJ26 STYLE) |
Bulk Metal Foil Technology, Precision Trimming Potentiometers, QPL Approved 1/4 Inch Square, Qualified to Mil-PRF-22097, Char. F, RJ26 |
Vishay |
| 2 |
1268W100R |
Bulk Metal Foil Technology Precision Trimming Potentiometers 3/8 Inch Square/ RJ24 Style - Industrial Trimmer |
Vishay |
| 3 |
1401 |
Bulk Metal Foil Technology, 3 Pin Transistor Outline Hermetic Resistor Network |
Vishay |
| 4 |
1403 |
Bulk Metal Foil Technology, 4 Pin Transistor Outline Hermetic Resistor Network, Smallest Available Miniature Hermetically-Sealed Network |
Vishay |
| 5 |
1413 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Ideal for Uncomplicated Networks |
Vishay |
| 6 |
1417 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Alternative Layout to Model 1413 |
Vishay |
| 7 |
1419 |
Bulk Metal Foil Technology, 10 Pin Transistor Outline Hermetic Resistor Network, Largest R Capacity of the Smaller TO Series |
Vishay |
| 8 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 9 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 10 |
1442 |
Bulk Metal Foil Technology, Dual-In-Line Hermetic Resistor Networks |
Vishay |
| 11 |
1445 |
Bulk Metal Foil Technology, Dual-In-Line Hermetic Resistor Networks |
Vishay |
| 12 |
1445Q(QPL) |
Bulk Metal Foil Technology, 1445Q-14 Pin and 1446Q-16 Pin DIP Packages |
Vishay |
| 13 |
1446 |
Bulk Metal Foil Technology, Dual-In-Line Hermetic Resistor Networks |
Vishay |
| 14 |
1446Q(QPL) |
Bulk Metal Foil Technology, 1445Q-14 Pin and 1446Q-16 Pin DIP Packages |
Vishay |
| 15 |
1457 |
Bulk Metal Foil Technology, 18 Pin Dual-In-Line Hermetic Resistor Network |
Vishay |
| 16 |
1460 |
Bulk Metal Foil Technology, 20 Pin Dual-In-Line Hermetic Resistor Network |
Vishay |
| 17 |
1461 |
Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks |
Vishay |
| 18 |
1463 |
Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks |
Vishay |
| 19 |
1464 |
Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks |
Vishay |
| 20 |
1466 |
Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks |
Vishay |
| 21 |
28F256 |
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt / Bulk Erase Flash Memory with Embedded Algorithms |
Advanced Micro Devices |
| 22 |
28F256 |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
ST Microelectronics |
| 23 |
300190-9 |
Bulk Metal Foil Technology Molded Resistor Networks |
Vishay |
| 24 |
300210-12 |
Bulk Metal Foil Technology Molded Resistor Networks |
Vishay |
| 25 |
AM27F010-120EC |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory |
Advanced Micro Devices |
| 26 |
AM27F010-120ECB |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
Advanced Micro Devices |
| 27 |
AM27F010-120EE |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory |
Advanced Micro Devices |
| 28 |
AM27F010-120EEB |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
Advanced Micro Devices |
| 29 |
AM27F010-120EI |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory |
Advanced Micro Devices |
| 30 |
AM27F010-120EIB |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
Advanced Micro Devices |
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