No. |
Part Name |
Description |
Manufacturer |
1 |
GAO10C-1A |
Gallium-arsenide GUNN device |
Siemens |
2 |
GAO10D-1A |
Gallium-arsenide GUNN device |
Siemens |
3 |
GAO10E-1A |
Gallium-arsenide GUNN device |
Siemens |
4 |
GAO10F-1A |
Gallium-arsenide GUNN device |
Siemens |
5 |
GAO10G-1A |
Gallium-arsenide GUNN device |
Siemens |
6 |
GAO10I-1A |
Gallium-arsenide GUNN device |
Siemens |
7 |
GAO20C-1B |
Gallium-arsenide GUNN device |
Siemens |
8 |
GAO20D-1B |
Gallium-arsenide GUNN device |
Siemens |
9 |
GAO20E-1B |
Gallium-arsenide GUNN device |
Siemens |
10 |
GAO20F-1B |
Gallium-arsenide GUNN device |
Siemens |
11 |
GAO20G-1B |
Gallium-arsenide GUNN device |
Siemens |
12 |
GAO20I-1B |
Gallium-arsenide GUNN device |
Siemens |
13 |
GAO50C-1C |
Gallium-arsenide GUNN device |
Siemens |
14 |
GAO50D-1C |
Gallium-arsenide GUNN device |
Siemens |
15 |
GAO50E-1C |
Gallium-arsenide GUNN device |
Siemens |
16 |
GAO50F-1C |
Gallium-arsenide GUNN device |
Siemens |
17 |
GAO50G-1C |
Gallium-arsenide GUNN device |
Siemens |
18 |
GAO50I-1C |
Gallium-arsenide GUNN device |
Siemens |
19 |
MT3S150P |
Gallium-Arsenide heterojunction bipolar transistor |
TOSHIBA |
20 |
TIL191 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
21 |
TIL191A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
22 |
TIL191B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
23 |
TIL192 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
24 |
TIL192A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
25 |
TIL192B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
26 |
TIL193 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
27 |
TIL193A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
28 |
TIL193B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| | | |