| No. |
Part Name |
Description |
Manufacturer |
| 1 |
174CQY |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 2 |
183CQY |
Visible (red) electroluminiscent GaAsP light emitting diode |
Mullard |
| 3 |
CQY10 |
Gallium arsenide luminiscence diode, infrared source for high modulation frequencies. The spectral emission is in range of the spectral sensitivity of silicon photoelektronic devices |
AEG-TELEFUNKEN |
| 4 |
CQY11B |
Electroluminiscent Ga As diode |
Mullard |
| 5 |
CQY11C |
Electroluminiscent Ga As diode |
Mullard |
| 6 |
CQY12B |
Electroluminiscent Ga As diode |
Mullard |
| 7 |
CQY13 |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 8 |
CQY23 |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 9 |
CQY24 |
Visible (red) electroluminiscent GaAsP light emitting diode |
Mullard |
| | | |
