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Datasheets for US D

Datasheets found :: 5664
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No. Part Name Description Manufacturer
1 100323 Low Power Hex Bus Driver Fairchild Semiconductor
2 100323 Low Power Hex Bus Driver National Semiconductor
3 100323CW Low Power Hex Bus Driver Fairchild Semiconductor
4 100323D Low Power Hex Bus Driver National Semiconductor
5 100323DMQB Low Power Hex Bus Driver National Semiconductor
6 100323DMQB Low Power Hex Bus Driver National Semiconductor
7 100323F Low Power Hex Bus Driver National Semiconductor
8 100323FMQB Low Power Hex Bus Driver National Semiconductor
9 100323FMQB Low Power Hex Bus Driver National Semiconductor
10 100323PC Low Power Hex Bus Driver Fairchild Semiconductor
11 100323QC Low Power Hex Bus Driver Fairchild Semiconductor
12 100323QCX Low Power Hex Bus Driver Fairchild Semiconductor
13 1S2076 Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-35V, VR=-30V Hitachi Semiconductor
14 1S2076A Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V Hitachi Semiconductor
15 1SS108 Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching Hitachi Semiconductor
16 1SS199 Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching Hitachi Semiconductor
17 1SS199MHD Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching Hitachi Semiconductor
18 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
19 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
20 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
21 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
22 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
23 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
24 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
25 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
26 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
27 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
28 2SB1126 PNP Epitaxial Planar Silicon Transistors For Various Drivers SANYO
29 2SB880 PNP Epitaxial Planar Silicon Darlington Tranasistors For Various Drivers Applications SANYO
30 2SC4491 NPN Epitaxial Planar Silicon Transistor L Load (Various Drivers) Switching Applications SANYO


Datasheets found :: 5664
Page: | 1 | 2 | 3 | 4 | 5 |



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