| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4001 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 2 |
1N4001G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 3 |
1N4002 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 4 |
1N4002G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 5 |
1N4003 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 6 |
1N4003G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 7 |
1N4004 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 8 |
1N4004G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 9 |
1N4005 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 10 |
1N4005G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 11 |
1N4006 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 12 |
1N4006G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 13 |
1N4007 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 14 |
1N4007G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 15 |
1N459 |
Glass passivated silicon switching diode with high breaking voltage, marking using plain text or color rings yellow-green-white |
Texas Instruments |
| 16 |
1SS97 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
| 17 |
1SS97 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 18 |
1SS98 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 19 |
1SS99 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
| 20 |
1SS99 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 21 |
2N4957 |
Application Note - UHF amplifier design using data sheet design curves |
Motorola |
| 22 |
2N5016 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 23 |
2N5470 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 24 |
2N5919 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 25 |
2N5942 |
Application Note - Broadband Linear Power Amplifiers using Push-Pull transistors |
Motorola |
| 26 |
2N6105 |
60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
RCA Solid State |
| 27 |
2N6266 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 28 |
2N6267 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 29 |
400WA10M12.5X16 |
Low-Cost 100 mA High-Voltage Buck and Buck-Boost Using NCP1052 |
ON Semiconductor |
| 30 |
56-218 |
Fastening kit for transistors with TO-5 and TO-39 housings with an all-metal base |
VALVO |
| | | |
