| No. |
Part Name |
Description |
Manufacturer |
| 1 |
27256 |
256K (32k x 8) Bit NMOS UV Erasable PROM |
General Semiconductor |
| 2 |
27C080 |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
| 3 |
27C1028 |
CMOS 1048576 BIT UV ERASABLE READ ONLY MEMORY |
Fujitsu Microelectronics |
| 4 |
27C128 |
128K (16K x 8) CMOS UV Erasable PROM |
General Semiconductor |
| 5 |
27C16 |
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
| 6 |
27C16Q450 |
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
| 7 |
27C16Q550 |
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
| 8 |
27C16Q883 |
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
| 9 |
27C256 |
256K CMOS UV Erasable PROM (32K X 8) |
General Semiconductor |
| 10 |
27C256 |
262,144-Bit (32,768 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
| 11 |
27C256 |
256K CMOS UV Erasable PROM (32K X 8) |
Philips |
| 12 |
27C256E250_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns |
National Semiconductor |
| 13 |
27C256E300_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 300ns |
National Semiconductor |
| 14 |
27C256E350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
| 15 |
27C256Q250_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns |
National Semiconductor |
| 16 |
27C256Q300_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 300ns |
National Semiconductor |
| 17 |
27C256Q350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
| 18 |
27C64 |
65,536-Bit (8,192 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
| 19 |
5962-87539013X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 20 |
5962-87539013X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 21 |
5962-8753901LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 22 |
5962-8753901LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 23 |
5962-87539053X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 24 |
5962-87539053X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 25 |
5962-8753905LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 26 |
5962-8753905LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 27 |
5962-88670013X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 28 |
5962-88670013X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 29 |
5962-8867001LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 30 |
5962-8867001LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
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