No. |
Part Name |
Description |
Manufacturer |
1 |
HUF75333G3 |
Power dissipation 111 W Transistor polarity N Channel Current Id cont. 56 A Pitch lead 5.45 mm Voltage Vds max 55 V Resistance Rds on 0.016 R Temperature current 25 ?C Temperature power 25 ?C |
Fairchild Semiconductor |
2 |
PDTB113ET |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 1 kOhm |
Nexperia |
3 |
PDTB113ET |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 1 kOhm |
NXP Semiconductors |
4 |
PDTB113ZT |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm |
Nexperia |
5 |
PDTB113ZT |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
6 |
PDTB123ET |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Nexperia |
7 |
PDTB123ET |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
NXP Semiconductors |
8 |
PDTB123TT |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = open |
Nexperia |
9 |
PDTB123TT |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = open |
NXP Semiconductors |
10 |
PDTB123Y |
PNP 500 mA, 50 V resistor-equipped transistors |
Philips |
11 |
PDTB123YK |
PNP 500 mA, 50 V resistor-equipped transistors |
Philips |
12 |
PDTB123YS |
PNP 500 mA, 50 V resistor-equipped transistors |
Philips |
13 |
PDTB123YT |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm |
Nexperia |
14 |
PDTB123YT |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
15 |
PDTB123YT |
PNP 500 mA, 50 V resistor-equipped transistors |
Philips |
16 |
PDTC323TK |
NPN 500 mA, 15 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = open |
Philips |
17 |
PDTD113ET |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 1 kOhm |
Nexperia |
18 |
PDTD113ET |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 1 kOhm |
NXP Semiconductors |
19 |
PDTD113ZT |
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm |
Nexperia |
20 |
PDTD113ZT |
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
21 |
PDTD123E |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW |
Philips |
22 |
PDTD123EK |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW |
Philips |
23 |
PDTD123ES |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW |
Philips |
24 |
PDTD123ET |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Nexperia |
25 |
PDTD123ET |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
NXP Semiconductors |
26 |
PDTD123ET |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW |
Philips |
27 |
PDTD123TT |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open |
Nexperia |
28 |
PDTD123TT |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open |
NXP Semiconductors |
29 |
PDTD123YT |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm |
Nexperia |
30 |
PDTD123YT |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
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