No. |
Part Name |
Description |
Manufacturer |
1 |
HN58V1001 |
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
Hitachi Semiconductor |
2 |
HN58V1001FP-25 |
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
Hitachi Semiconductor |
3 |
HN58V1001FP-25 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
4 |
HN58V1001FP-25E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
5 |
HN58V1001P-25 |
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
Hitachi Semiconductor |
6 |
HN58V1001T |
Parallel EEPROMs |
Hitachi Semiconductor |
7 |
HN58V1001T-25 |
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
Hitachi Semiconductor |
8 |
HN58V1001T-25 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
9 |
HN58V1001T-25E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
10 |
IC66LV10016AL |
ASYNCHRONOUS STATIC RAM, Pseudo SRAM |
ICSI |
11 |
IC66LV10016AL-70B |
16M-BIT (1M-WORD BY 16-BIT) Low Power Pseudo SRAM |
Integrated Circuit Solution Inc |
12 |
LE28CV1001M |
1MEG (131072 words x 8 bits) Flash Memory |
SANYO |
13 |
LE28CV1001M-12 |
1MEG (131072words x 8bit) flash memory |
SANYO |
14 |
LE28CV1001M-15 |
1MEG (131072words x 8bit) flash memory |
SANYO |
15 |
LE28CV1001T |
1MEG (131072 words x 8 bits) Flash Memory |
SANYO |
16 |
LE28CV1001T-12 |
1MEG (131072 words x 8 bits) Flash Memory |
SANYO |
17 |
LE28CV1001T-15 |
1MEG (131072 words x 8 bits) Flash Memory |
SANYO |
18 |
M5M5V1001CJ-15 |
15ns; active current: 120mA; V(cc): -0.3 to 7.0V; 1000mW; ROM: external; 16MHz; single-chip 16-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
19 |
M5M5V1001CJ-20 |
20ns; active current: 100mA; V(cc): -0.3 to 7.0V; 1000mW; ROM: external; 16MHz; single-chip 16-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
20 |
M5M5V1001CJ-25 |
25ns; active current: 90mA; V(cc): -0.3 to 7.0V; 1000mW; ROM: external; 16MHz; single-chip 16-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
21 |
M5M5V1001CP-15 |
15ns; active current: 120mA; V(cc): -0.3 to 7.0V; 1000mW; ROM: external; 16MHz; single-chip 16-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
22 |
M5M5V1001CP-20 |
20ns; active current: 100mA; V(cc): -0.3 to 7.0V; 1000mW; ROM: external; 16MHz; single-chip 16-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
23 |
M5M5V1001CP-25 |
25ns; active current: 90mA; V(cc): -0.3 to 7.0V; 1000mW; ROM: external; 16MHz; single-chip 16-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
24 |
RBV1001 |
SILICON BRIDGE RECTIFIERS |
EIC discrete Semiconductors |
25 |
RBV1001D |
SILICON BRIDGE RECTIFIERS |
EIC discrete Semiconductors |
26 |
SPV1001 |
Cool bypass switch for photovoltaic applications |
ST Microelectronics |
27 |
SPV1001D40 |
Cool bypass switch for photovoltaic applications |
ST Microelectronics |
28 |
SPV1001D40TR |
Cool bypass switch for photovoltaic applications |
ST Microelectronics |
29 |
SPV1001N |
Cool bypass switch for photovoltaic applications |
ST Microelectronics |
30 |
SPV1001N30 |
Cool bypass switch for photovoltaic applications |
ST Microelectronics |
| | | |