No. |
Part Name |
Description |
Manufacturer |
1 |
HN58V1001FP-25 |
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
Hitachi Semiconductor |
2 |
HN58V1001FP-25 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
3 |
HN58V1001FP-25E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
4 |
TC55V1001F |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
5 |
TC55V1001F-10 |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
6 |
TC55V1001F-10L |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
7 |
TC55V1001F-85 |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
8 |
TC55V1001F-85L |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
9 |
TC55V1001FI |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
10 |
TC55V1001FI-10 |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
11 |
TC55V1001FI-10L |
131,072-WORD BY 8-BIT STATIC RAM |
TOSHIBA |
12 |
TC55V1001FI-85 |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
13 |
TC55V1001FI-85L |
131,072-WORD BY 8-BIT STATIC RAM |
TOSHIBA |
14 |
TC55V1001FT-10 |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
15 |
TC55V1001FT-10L |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
16 |
TC55V1001FT-85 |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
17 |
TC55V1001FT-85L |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
18 |
TC55V1001FTI-10 |
131,072-word by 8 bit static RAM, access time 100ns |
TOSHIBA |
19 |
TC55V1001FTI-10L |
131,072-WORD BY 8-BIT STATIC RAM |
TOSHIBA |
20 |
TC55V1001FTI-85 |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
21 |
TC55V1001FTI-85L |
131,072-WORD BY 8-BIT STATIC RAM |
TOSHIBA |
22 |
TC58V1001F-10L |
131,072-word by 8 bit static RAM, 100 ns |
TOSHIBA |
23 |
TC58V1001F-85L |
131,072-word by 8 bit static RAM, 85 ns |
TOSHIBA |
24 |
TC58V1001FT-10L |
131,072-word by 8 bit static RAM, 100 ns |
TOSHIBA |
25 |
TC58V1001FT-85L |
131,072-word by 8 bit static RAM, 85 ns |
TOSHIBA |
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