| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AQV410 |
PhotoMOS RELAYS |
Matsushita Electric Works(Nais) |
| 2 |
AQV410EH |
PhotoMOS RELAYS |
Matsushita Electric Works(Nais) |
| 3 |
AQV410EHA |
PhotoMOS RELAYS |
Matsushita Electric Works(Nais) |
| 4 |
AQV410EHAX |
PhotoMOS RELAYS |
Matsushita Electric Works(Nais) |
| 5 |
AQV410EHAZ |
PhotoMOS RELAYS |
Matsushita Electric Works(Nais) |
| 6 |
AQV414 |
HIGH VOLTAGE, PHOTO MOS RELAY |
Global Components & Controls |
| 7 |
AQV414 |
HIGH VOLTAGE, PHOTO MOS RELAY |
Global Components & Controls |
| 8 |
AQV414 |
PhotoMOS relay, GU (general use) type [1-channel (form B) type]. AC/DC type. I/O isolation: 1.500 V AC. Output rating: load voltage 400 V, load current 120 mA. Through hole terminal, tube packing style. |
Matsushita Electric Works(Nais) |
| 9 |
AQV414A |
HIGH VOLTAGE, PHOTO MOS RELAY |
Global Components & Controls |
| 10 |
AQV414A |
PhotoMOS relay, GU (general use) type [1-channel (form B) type]. AC/DC type. I/O isolation: 1.500 V AC. Output rating: load voltage 400 V, load current 120 mA. Surface-mount terminal, tube packing style. |
Matsushita Electric Works(Nais) |
| 11 |
AQV414AX |
PhotoMOS relay, GU (general use) type [1-channel (form B) type]. AC/DC type. I/O isolation: 1.500 V AC. Output rating: load voltage 400 V, load current 120 mA. Surface-mount terminal, tape and reel packing style, picked from the 1/2/3-pin |
Matsushita Electric Works(Nais) |
| 12 |
AQV414AZ |
PhotoMOS relay, GU (general use) type [1-channel (form B) type]. AC/DC type. I/O isolation: 1.500 V AC. Output rating: load voltage 400 V, load current 120 mA. Surface-mount terminal, tape and reel packing style, picked from the 4/5/6-pin |
Matsushita Electric Works(Nais) |
| 13 |
AQV414E |
PhotoMOS RELAYS |
Matsushita Electric Works(Nais) |
| 14 |
AQV414EA |
PhotoMOS RELAYS |
Matsushita Electric Works(Nais) |
| 15 |
AQV414EAX |
PhotoMOS RELAYS |
Matsushita Electric Works(Nais) |
| 16 |
AQV414EAZ |
PhotoMOS RELAYS |
Matsushita Electric Works(Nais) |
| 17 |
AQV414EH |
PhotoMOS RELAYS |
Matsushita Electric Works(Nais) |
| 18 |
AQV414EHA |
PhotoMOS RELAYS |
Matsushita Electric Works(Nais) |
| 19 |
AQV414EHAX |
PhotoMOS RELAYS |
Matsushita Electric Works(Nais) |
| 20 |
AQV414EHAZ |
PhotoMOS RELAYS |
Matsushita Electric Works(Nais) |
| 21 |
AQV414S |
HIGH VOLTAGE, PHOTO MOS RELAY |
Global Components & Controls |
| 22 |
AQV414SX |
PhotoMOS relay, GU (general use) type [1-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Picked from the 1/2/3-pin side |
Matsushita Electric Works(Nais) |
| 23 |
AQV414SZ |
PhotoMOS relay, GU (general use) type [1-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Picked from the 4/5/6-pin side |
Matsushita Electric Works(Nais) |
| 24 |
BAV41 |
Multiple diode arrays, common anode CF |
Mullard |
| 25 |
BAV41 |
Multiple Diode |
Philips |
| 26 |
BSV41 |
Switching transistor |
mble |
| 27 |
BUV41 |
Trans GP BJT NPN 200V 20A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 28 |
BYV410-600 |
Dual enhanced ultrafast power diode |
NXP Semiconductors |
| 29 |
BYV4100 |
Fast soft-recovery controlled avalanche rectifier |
Philips |
| 30 |
BYV410X-600 |
Dual enhanced ultrafast power diode |
NXP Semiconductors |
| | | |
