| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BYV4100 |
Fast soft-recovery controlled avalanche rectifier |
Philips |
| 2 |
IC41LV4100 |
DYNAMIC RAM, EDO DRAM |
ICSI |
| 3 |
IS41LV4100 |
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Silicon Solution Inc |
| 4 |
IS41LV4100-35J |
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Silicon Solution Inc |
| 5 |
IS41LV4100-60J |
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Silicon Solution Inc |
| 6 |
IS41LV4100-60JI |
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Silicon Solution Inc |
| 7 |
KM416V4100B |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 8 |
KM416V4100BS-45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
| 9 |
KM416V4100BS-5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
| 10 |
KM416V4100BS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
| 11 |
KM416V4100BS-L45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 12 |
KM416V4100BS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 13 |
KM416V4100BS-L6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 14 |
KM416V4100C |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 15 |
KM416V4100CS-45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
| 16 |
KM416V4100CS-5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
| 17 |
KM416V4100CS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
| 18 |
KM416V4100CS-L45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 19 |
KM416V4100CS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 20 |
KM416V4100CS-L6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 21 |
KM44V4100C |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 22 |
KM44V4100CK-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 23 |
KM44V4100CK-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 24 |
KM44V4100CKL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 25 |
KM44V4100CKL-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 26 |
KM44V4100CS-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 27 |
KM44V4100CS-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 28 |
KM44V4100CSL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 29 |
KM44V4100CSL-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 30 |
MIV41001-72 |
3 Stack ISIS Diodes |
Microsemi |
| | | |
