| No. |
Part Name |
Description |
Manufacturer |
| 1 |
K6T4008U1C-VB10 |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
| 2 |
MAX5490VB10000+ |
100kΩ Precision-Matched Resistor-Divider in SOT23 |
MAXIM - Dallas Semiconductor |
| 3 |
MAX5490VB10000+T |
100kΩ Precision-Matched Resistor-Divider in SOT23 |
MAXIM - Dallas Semiconductor |
| 4 |
MAX5490VB10000-T |
Ratio accuracy: 0.05%, 80 V, 100 kom precision-matched resistor-divider in SOT23 |
MAXIM - Dallas Semiconductor |
| 5 |
MAX5491VB10000-T |
Precision-Matched Resistor-Divider in SOT23 |
MAXIM - Dallas Semiconductor |
| 6 |
S15VB10 |
Silicon rectifier diode - bridge type |
Shindengen |
| 7 |
S15VB100 |
1000 V, 15 A, bridge rectifier |
Leshan Radio Company |
| 8 |
S1VB10 |
Silicon rectifier diode - bridge type |
Shindengen |
| 9 |
S25VB10 |
Silicon rectifier diode - bridge type |
Shindengen |
| 10 |
S25VB100 |
1000 V, 25 A, bridge rectifier |
Leshan Radio Company |
| 11 |
S2VB10 |
Silicon rectifier diode - bridge type |
Shindengen |
| 12 |
S4VB10 |
Silicon rectifier diode - bridge type |
Shindengen |
| 13 |
S5VB10 |
Silicon rectifier diode - bridge type |
Shindengen |
| 14 |
VB10 |
Diode Schottky 150V 10A 3-Pin(2+Tab) TO-263AB |
New Jersey Semiconductor |
| 15 |
VB100 |
Diode Schottky 150V 10A 3-Pin(2+Tab) TO-263AB |
New Jersey Semiconductor |
| 16 |
VB1010EPL |
21 mA, spectra-band photocell |
Texas Instruments |
| 17 |
VB1020EPL |
42 mA, spectra-band photocell |
Texas Instruments |
| 18 |
VB10X |
Diode Schottky 150V 10A 3-Pin(2+Tab) TO-263AB |
New Jersey Semiconductor |
| | | |
