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Datasheets for VCER

Datasheets found :: 38
Page: | 1 | 2 |
No. Part Name Description Manufacturer
1 2N3055 High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. USHA India LTD
2 2N3773 High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. USHA India LTD
3 2N5294 Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. USHA India LTD
4 2N5296 Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. USHA India LTD
5 BC635 Transistor. Switching and amplifier applications. Vcer = 45V, Vces = 45V, Vceo= 45V, Vebo = 5V, Pc = 1W, Ic = 1A. USHA India LTD
6 BC636 Transistor. Switching and amplifier applications. Vcer = -45V, Vces = -45V, Vceo= -45V, Vebo = -5V, Pc = 1W, Ic = -1A. USHA India LTD
7 BC637 Transistor. Switching and amplifier applications. Vcer = 60V, Vces = 60V, Vceo= 60V, Vebo = 5V, Pc = 1W, Ic = 1A. USHA India LTD
8 BC638 Transistor. Switching and amplifier applications. Vcer = -60V, Vces = -60V, Vceo = -60V, Vebo = -5V, Pc = 1W, Ic = -1A. USHA India LTD
9 BC640 Transistor. Switching and amplifier applications. Vcer = -100V, Vces = -100V, Vceo = -80V, Vebo = -5V, Pc = 1W, Ic = -1A. USHA India LTD
10 BD240 Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 30W. General Electric Solid State
11 BD240A Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 30W. General Electric Solid State
12 BD240B Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 30W. General Electric Solid State
13 BD240C Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 30W. General Electric Solid State
14 BD241 Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 40W. General Electric Solid State
15 BD241A Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 40W. General Electric Solid State
16 BD241B Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 40W. General Electric Solid State
17 BD241C Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 40W. General Electric Solid State
18 BD242 Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 40W. General Electric Solid State
19 BD242A Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 40W. General Electric Solid State
20 BD242B Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 40W. General Electric Solid State
21 BD242C Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 40W. General Electric Solid State
22 BD243 Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 65W. General Electric Solid State
23 BD243A Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 65W. General Electric Solid State
24 BD243B Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 65W. General Electric Solid State
25 BD243C Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 65W. General Electric Solid State
26 BD244 Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 65W. General Electric Solid State
27 BD244A Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 65W. General Electric Solid State
28 BD244B Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 65W. General Electric Solid State
29 BD244C Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 65W. General Electric Solid State
30 MJ2955 PNP High power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc Ic = 15Adc, PD = 115W. USHA India LTD


Datasheets found :: 38
Page: | 1 | 2 |



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