No. |
Part Name |
Description |
Manufacturer |
1 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
2 |
2N3773 |
High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. |
USHA India LTD |
3 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
4 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
5 |
BC635 |
Transistor. Switching and amplifier applications. Vcer = 45V, Vces = 45V, Vceo= 45V, Vebo = 5V, Pc = 1W, Ic = 1A. |
USHA India LTD |
6 |
BC636 |
Transistor. Switching and amplifier applications. Vcer = -45V, Vces = -45V, Vceo= -45V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
7 |
BC637 |
Transistor. Switching and amplifier applications. Vcer = 60V, Vces = 60V, Vceo= 60V, Vebo = 5V, Pc = 1W, Ic = 1A. |
USHA India LTD |
8 |
BC638 |
Transistor. Switching and amplifier applications. Vcer = -60V, Vces = -60V, Vceo = -60V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
9 |
BC640 |
Transistor. Switching and amplifier applications. Vcer = -100V, Vces = -100V, Vceo = -80V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
10 |
BD240 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 30W. |
General Electric Solid State |
11 |
BD240A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 30W. |
General Electric Solid State |
12 |
BD240B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 30W. |
General Electric Solid State |
13 |
BD240C |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 30W. |
General Electric Solid State |
14 |
BD241 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 40W. |
General Electric Solid State |
15 |
BD241A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 40W. |
General Electric Solid State |
16 |
BD241B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 40W. |
General Electric Solid State |
17 |
BD241C |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 40W. |
General Electric Solid State |
18 |
BD242 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 40W. |
General Electric Solid State |
19 |
BD242A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 40W. |
General Electric Solid State |
20 |
BD242B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 40W. |
General Electric Solid State |
21 |
BD242C |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 40W. |
General Electric Solid State |
22 |
BD243 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 65W. |
General Electric Solid State |
23 |
BD243A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 65W. |
General Electric Solid State |
24 |
BD243B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 65W. |
General Electric Solid State |
25 |
BD243C |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 65W. |
General Electric Solid State |
26 |
BD244 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 65W. |
General Electric Solid State |
27 |
BD244A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 65W. |
General Electric Solid State |
28 |
BD244B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 65W. |
General Electric Solid State |
29 |
BD244C |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 65W. |
General Electric Solid State |
30 |
MJ2955 |
PNP High power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc Ic = 15Adc, PD = 115W. |
USHA India LTD |
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