| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2PB1424 |
20 V, 3 A PNP low VCEsat (BISS) transistor |
Nexperia |
| 2 |
2PB1424 |
20 V, 3 A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
| 3 |
2PB1424 |
20 V, 3 A PNP low VCEsat (BISS) transistor |
Philips |
| 4 |
2PD2150 |
20 V, 3 A NPN low VCEsat (BISS) transistor |
Nexperia |
| 5 |
2PD2150 |
20 V, 3 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
| 6 |
2PD2150 |
20 V, 3 A NPN low VCEsat (BISS) transistor |
Philips |
| 7 |
BC328 |
Transistor. Switch. and amp. applications. Suitable for AF-driver and power output stages. Vces = -30V, Vceo = -25V, Vebo = -5V. Collector dissipation Pc(max) = 625mW. Ic = -800mA. |
USHA India LTD |
| 8 |
BC338 |
Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Vces = 30V, Vceo= 25V, Vebo = 5V, Pc = 625mW, Ic = 800mA. |
USHA India LTD |
| 9 |
BC635 |
Transistor. Switching and amplifier applications. Vcer = 45V, Vces = 45V, Vceo= 45V, Vebo = 5V, Pc = 1W, Ic = 1A. |
USHA India LTD |
| 10 |
BC636 |
Transistor. Switching and amplifier applications. Vcer = -45V, Vces = -45V, Vceo= -45V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
| 11 |
BC637 |
Transistor. Switching and amplifier applications. Vcer = 60V, Vces = 60V, Vceo= 60V, Vebo = 5V, Pc = 1W, Ic = 1A. |
USHA India LTD |
| 12 |
BC638 |
Transistor. Switching and amplifier applications. Vcer = -60V, Vces = -60V, Vceo = -60V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
| 13 |
BC640 |
Transistor. Switching and amplifier applications. Vcer = -100V, Vces = -100V, Vceo = -80V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
| 14 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 15 |
BD241B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 16 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 17 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 18 |
BD242B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 19 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 20 |
BU208D |
NPN, horizontal deflection transistor with integrated damper diode. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 60W. |
USHA India LTD |
| 21 |
BU426A |
Transistor polarity NPN Voltage Vce sat max 3 V Voltage Vceo 400 V Current Ic @ Vce sat 4 A Time fall @ Ic 0.75 ?s Current Ic av. 6 A Power Ptot 70 W Voltage Vces 900 V |
SGS Thomson Microelectronics |
| 22 |
BU508A |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. |
USHA India LTD |
| 23 |
BU508D |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. |
USHA India LTD |
| 24 |
BUF405A |
Transistor polarity NPN Voltage Vce sat max 2.8 V Voltage Vceo 450 V Current Ic @ Vce sat 2.5 A Time fall @ Ic 0.1 ?s Current Ic av. 7.5 A Power Ptot 80 W Voltage Vces 1000 V |
SGS Thomson Microelectronics |
| 25 |
BUS50 |
70 AMPERES NPN SILICON POWER TRANSISTOR 125 VOLTS (BVCEO) 350 WATTS 200 V (BVCES) |
Motorola |
| 26 |
GP801DCM18 |
Hi-Reliability Chopper Switch Low VCESAT IGBT Module |
Dynex Semiconductor |
| 27 |
GP801DCS18 |
Chopper Switch Low VCESAT IGBT Module |
Dynex Semiconductor |
| 28 |
GP801DDM18 |
Hi-Reliability Dual Switch Low VCESAT IGBT Module |
Dynex Semiconductor |
| 29 |
IRG4BC20KDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) |
International Rectifier |
| 30 |
IRG4BC20KS |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) |
International Rectifier |
| | | |
