| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N995 |
Gold bounded germanium signal diode - very high speed switching |
SESCOSEM |
| 2 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
| 3 |
2N2357 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 4 |
2N2358 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 5 |
2N2359 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 6 |
2N2913 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 7 |
2N2914 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 8 |
2N2915 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 9 |
2N2916 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 10 |
2N2917 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 11 |
2N2918 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 12 |
2N2919 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 13 |
2N2920 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 14 |
2N2972 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 15 |
2N2973 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 16 |
2N2974 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 17 |
2N2975 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 18 |
2N2976 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 19 |
2N2977 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 20 |
2N2978 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 21 |
2N2979 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 22 |
2SA1474 |
Very High-Definition CRT Display, Video Output Applications |
SANYO |
| 23 |
2SA1475 |
Very High-Definition CRT Display, Video Output Applications |
SANYO |
| 24 |
2SA1476 |
Very High-Definition CRT Display, Video Output Applications |
SANYO |
| 25 |
2SA1777 |
PNP Epitaxial Planar Silicon Transistors Very High-Definition CRT Display Video Output Applications |
SANYO |
| 26 |
2SC3636 |
Very High-Definition Display Horizontal Deflection Output Applications |
SANYO |
| 27 |
2SC3637 |
Very High-Definition Display Horizontal Deflection Output Applications |
SANYO |
| 28 |
2SC3638 |
Very High-Definition Display Horizontal Deflection Output Applications |
SANYO |
| 29 |
2SC3643 |
Very High-Definition Display Horizontal Deflection Output Applications |
SANYO |
| 30 |
2SC3685 |
Very High-Definition CRT Display Horizontal Deflection Output |
SANYO |
| | | |
