| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HY27LF081G2M-VMB |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
Hynix Semiconductor |
| 2 |
HY27LF161G2M-VMB |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
Hynix Semiconductor |
| 3 |
HY27SF081G2M-VMB |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
Hynix Semiconductor |
| 4 |
HY27SF161G2M-VMB |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
Hynix Semiconductor |
| 5 |
HY27UF081G2M-VMB |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
Hynix Semiconductor |
| 6 |
HY27UF161G2M-VMB |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
Hynix Semiconductor |
| 7 |
MEM8129VMB-15 |
128K x 8-bit EEPROM, 150ns |
MSI Electronics |
| 8 |
MEM8129VMB-20 |
128K x 8-bit EEPROM, 200ns |
MSI Electronics |
| 9 |
MEM8129VMB-25 |
128K x 8-bit EEPROM, 250ns |
MSI Electronics |
| 10 |
PDTA144VMB |
PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ |
Nexperia |
| 11 |
PDTA144VMB |
PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ |
NXP Semiconductors |
| 12 |
PDTC144VMB |
NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ |
Nexperia |
| 13 |
PDTC144VMB |
NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ |
NXP Semiconductors |
| 14 |
VMB10-12F |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 15 |
VMB10-12S |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 16 |
VMB100-12 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 17 |
VMB150-28 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 18 |
VMB40-12F |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 19 |
VMB40-12S |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 20 |
VMB70-12F |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 21 |
VMB70-12S |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 22 |
VMB80-28F |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 23 |
VMB80-28S |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| | | |
