No. |
Part Name |
Description |
Manufacturer |
1 |
BVS170TS-EPC |
SURFACE MOUNT LED LAMPS |
etc |
2 |
GM71VS17403CJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns |
Hynix Semiconductor |
3 |
GM71VS17403CJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns |
Hynix Semiconductor |
4 |
GM71VS17403CJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns |
Hynix Semiconductor |
5 |
GM71VS17403CLJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low power |
Hynix Semiconductor |
6 |
GM71VS17403CLJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power |
Hynix Semiconductor |
7 |
GM71VS17403CLJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns, low power |
Hynix Semiconductor |
8 |
GM71VS17403CLT-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low power |
Hynix Semiconductor |
9 |
GM71VS17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power |
Hynix Semiconductor |
10 |
GM71VS17403CLT-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns, low power |
Hynix Semiconductor |
11 |
GM71VS17403CT-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns |
Hynix Semiconductor |
12 |
GM71VS17403CT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns |
Hynix Semiconductor |
13 |
GM71VS17403CT-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns |
Hynix Semiconductor |
14 |
HY51VS17403HG |
4M x 4Bit EDO DRAM |
Hynix Semiconductor |
15 |
HY51VS17403HGJ-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns |
Hynix Semiconductor |
16 |
HY51VS17403HGJ-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns |
Hynix Semiconductor |
17 |
HY51VS17403HGJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns |
Hynix Semiconductor |
18 |
HY51VS17403HGLJ-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
19 |
HY51VS17403HGLJ-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
20 |
HY51VS17403HGLJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
21 |
HY51VS17403HGLT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
22 |
HY51VS17403HGLT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
23 |
HY51VS17403HGLT-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
24 |
HY51VS17403HGT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns |
Hynix Semiconductor |
25 |
HY51VS17403HGT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns |
Hynix Semiconductor |
26 |
HY51VS17403HGT-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns |
Hynix Semiconductor |
27 |
PTVS17VP1UP |
600 W Transient Voltage Suppressor |
Nexperia |
28 |
PTVS17VP1UP |
600 W Transient Voltage Suppressor |
NXP Semiconductors |
29 |
PTVS17VP1UTP |
High-temperature 600 W Transient Voltage Suppressor |
Nexperia |
30 |
PTVS17VP1UTP |
PTVSxP1UTP series |
NXP Semiconductors |
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