| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1/4M110Z |
Zener Diode 1/4W 110V |
Motorola |
| 2 |
1/4M11Z |
Zener Diode 1/4W 11V |
Motorola |
| 3 |
1N2975 |
Diffused power zener diode 10W 11V |
Texas Instruments |
| 4 |
1N2975A |
Diffused power zener diode 10W 11V, ±10% tolerance |
Texas Instruments |
| 5 |
1N2975B |
Diffused power zener diode 10W 11V, ±5% tolerance |
Texas Instruments |
| 6 |
1N2975R |
Diffused power zener diode 10W 11V, reverse polarity |
Texas Instruments |
| 7 |
1N3007 |
Diffused power zener diode 10W 110V |
Texas Instruments |
| 8 |
1N3007A |
Diffused power zener diode 10W 110V, ±10% tolerance |
Texas Instruments |
| 9 |
1N3007B |
Diffused power zener diode 10W 110V, ±5% tolerance |
Texas Instruments |
| 10 |
1N3007R |
Diffused power zener diode 10W 110V, reverse polarity |
Texas Instruments |
| 11 |
1N3021B |
Silicon zener diode 1W 11V - metal case |
IPRS Baneasa |
| 12 |
1N3021B |
1W 11V Zener diode |
IPRS Baneasa |
| 13 |
1N3045B |
1W 110V Zener diode |
IPRS Baneasa |
| 14 |
1N5531 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 11V ±20% tolerance |
Motorola |
| 15 |
1N5531A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 11V ±10% tolerance |
Motorola |
| 16 |
1N5531B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 11V ±5% tolerance |
Motorola |
| 17 |
1S226 |
Silicon junction zener diode 1W 11V |
TOSHIBA |
| 18 |
1S257 |
Silicon junction zener diode 1W 110V |
TOSHIBA |
| 19 |
1S268 |
Silicon junction zener diode 10W 11V |
TOSHIBA |
| 20 |
1S299 |
Silicon junction zener diode 10W 110V |
TOSHIBA |
| 21 |
1S5110 |
Silicon power zener diode 10W 110V |
Texas Instruments |
| 22 |
1S5110A |
Silicon power zener diode 10W 110V, ±5% tolerance |
Texas Instruments |
| 23 |
1S5110C |
Silicon power zener diode 10W 110V, double anode |
Texas Instruments |
| 24 |
1S5110R |
Silicon power zener diode 10W 110V, reverse polarity |
Texas Instruments |
| 25 |
MAX4074AHESA |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 2.5V/V, noninverting gain 3.5V/V, -3dB BW 116kHZ. |
MAXIM - Dallas Semiconductor |
| 26 |
MAX4074AHEUK-T |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 2.5V/V, noniverting gain 3.5V/V, -3dB BW 116kHZ. |
MAXIM - Dallas Semiconductor |
| 27 |
MAX4075AHESA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 2.5V/V, noninverting gain 3.5V/V, -3dB BW 116kHz. |
MAXIM - Dallas Semiconductor |
| 28 |
MAX4075AHEUA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 2.5V/V, noninverting gain 3.5V/V, -3dB BW 116kHZ. |
MAXIM - Dallas Semiconductor |
| 29 |
MAX4174AFEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 1.5, 1+ (Rf/Dg) noninverting gain 2.5, -3dB BW 1180kHz. |
MAXIM - Dallas Semiconductor |
| 30 |
MAX4175AFEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 1.5, 1+ (Rf/Dg) noninverting gain 2.5, -3dB BW 1180kHz. |
MAXIM - Dallas Semiconductor |
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