| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1/4M175Z |
Zener Diode 1/4W 175V |
Motorola |
| 2 |
1/4M17Z |
Zener Diode 1/4W 17V |
Motorola |
| 3 |
1N5537 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 17V ±20% tolerance |
Motorola |
| 4 |
1N5537A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 17V ±10% tolerance |
Motorola |
| 5 |
1N5537B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 17V ±5% tolerance |
Motorola |
| 6 |
1S232 |
Silicon junction zener diode 1W 17V |
TOSHIBA |
| 7 |
1S274 |
Silicon junction zener diode 10W 17V |
TOSHIBA |
| 8 |
2N6081 |
NPN silicon RF power transistor 12.5V 15W 175MHz |
Motorola |
| 9 |
2N6084 |
NPN silicon RF power transistor 12.5V 40W 175MHz |
Motorola |
| 10 |
2N6094 |
PNP silicon RF power transistor 4W 175MHz |
Motorola |
| 11 |
2N6095 |
PNP silicon RF power transistor 15W 175MHz |
Motorola |
| 12 |
2N6096 |
PNP silicon RF power transistor 30W 175MHz |
Motorola |
| 13 |
2N6097 |
PNP silicon RF power transistor 40W 175MHz |
Motorola |
| 14 |
2SC1077 |
Silicon NPN epitaxial planar transistor, VHF power amplifiers applications (high voltage), RF Wide-Band amplifiers 40W 175MHz |
TOSHIBA |
| 15 |
MAX4174ABEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 0.25, 1+ (Rf/Dg) noninverting gain 1.25, -3dB BW 1700kHz. |
MAXIM - Dallas Semiconductor |
| 16 |
MAX4175ABEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 0.25, 1+ (Rf/Dg) noninverting gain 1.25, -3dB BW 1700kHz. |
MAXIM - Dallas Semiconductor |
| 17 |
MAX4274ABESA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 0.25, 1+ (Rf/Dg) noninverting gain 1.25, -3dB BW 1700kHz. |
MAXIM - Dallas Semiconductor |
| 18 |
MAX4274ABEUA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 0.25, 1+ (Rf/Dg) noninverting gain 1.25, -3dB BW 1700kHz. |
MAXIM - Dallas Semiconductor |
| 19 |
MAX4275ABESA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 0.25, 1+ (Rf/Dg) noninverting gain 1.25, -3dB BW 1700kHz. |
MAXIM - Dallas Semiconductor |
| 20 |
MAX4275ABEUA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 0.25, 1+ (Rf/Dg) noninverting gain 1.25, -3dB BW 1700kHz. |
MAXIM - Dallas Semiconductor |
| 21 |
MRF212 |
NPN silicon RF power transistor 10W 175MHz 12.5V |
Motorola |
| 22 |
MRF221 |
NPN silicon RF power transistor 12.5V 15W 175MHz |
Motorola |
| 23 |
MRF222 |
NPN silicon RF power transistor 25W 175MHz 12.5V |
Motorola |
| 24 |
MRF223 |
NPN silicon RF power transistor 30W 175MHz 12.5V |
Motorola |
| 25 |
MRF224 |
NPN silicon RF power transistor 12.5V 40W 175MHz |
Motorola |
| 26 |
MRF237 |
NPN silicon RF power transistor 12.5V 4W 175MHz |
Motorola |
| 27 |
MRF243 |
NPN silicon Controlled Q RF power transistor 60W 175MHz 12.5V |
Motorola |
| 28 |
MRF245 |
NPN silicon Controlled Q VHF RF power transistor 80W 175MHz 12.5V |
Motorola |
| | | |
