| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4154 |
500mW 35 Volt Silicon Epitaxial Diode |
Micro Commercial Components |
| 2 |
BU323 |
16A peak NPN silicon power darlington transistor 175W 350V |
Motorola |
| 3 |
CGY96 |
GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%) |
Siemens |
| 4 |
MJ10002 |
10A NPN silicon power darlington transistor 150W 350V |
Motorola |
| 5 |
MJ10004 |
20A NPN silicon power darlington transistor with base-emitter speedup diode 175W 350V SWITCHMODE SERIES |
Motorola |
| 6 |
MJ10006 |
10A NPN silicon power darlington transistor with base-emitter speedup diode 150W 350V SWITCHMODE SERIES |
Motorola |
| 7 |
MJ13332 |
20A NPN silicon power transistor 175W 350V |
Motorola |
| 8 |
Q62702G63 |
GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%) |
Siemens |
| | | |
