| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1/4M50Z |
Zener Diode 1/4W 50V |
Motorola |
| 2 |
1S247 |
Silicon junction zener diode 1W 50V |
TOSHIBA |
| 3 |
1S289 |
Silicon junction zener diode 10W 50V |
TOSHIBA |
| 4 |
2N5847 |
NPN silicon RF power transistor 7W 50MHz |
Motorola |
| 5 |
2N5848 |
NPN silicon RF power transistor 20W 50MHz |
Motorola |
| 6 |
ADP3335ARM-1.8 |
0.3-16V; 200mW; 500MHz, high accuracy ultralow 500mA anyCAP low dropout regulator. For PCMCIA card, cellular phones, camcorders and cameras |
Analog Devices |
| 7 |
ADP3335ARM-2.5 |
0.3-16V; 200mW; 500MHz, high accuracy ultralow 500mA anyCAP low dropout regulator. For PCMCIA card, cellular phones, camcorders and cameras |
Analog Devices |
| 8 |
ADP3335ARM-2.85 |
0.3-16V; 200mW; 500MHz, high accuracy ultralow 500mA anyCAP low dropout regulator. For PCMCIA card, cellular phones, camcorders and cameras |
Analog Devices |
| 9 |
ADP3335ARM-3.3 |
0.3-16V; 200mW; 500MHz, high accuracy ultralow 500mA anyCAP low dropout regulator. For PCMCIA card, cellular phones, camcorders and cameras |
Analog Devices |
| 10 |
ARF440 |
RF OPERATION (1-15 MHz) POWER MOS IV 125W 50V 13.56MHz |
Advanced Power Technology |
| 11 |
MAX4074ANESA |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 8V/V, noniverting gain 9V/V, -3dB BW 50kHZ. |
MAXIM - Dallas Semiconductor |
| 12 |
MAX4074ANEUK-T |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 8V/V, noniverting gain 9V/V, -3dB BW 50kHZ. |
MAXIM - Dallas Semiconductor |
| 13 |
MAX4074BJESA |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 49V/V, noninverting gain 50V/V, -3dB BW 50kHZ. |
MAXIM - Dallas Semiconductor |
| 14 |
MAX4074BJEUK-T |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 49V/V, noniverting gain 50V/V, -3dB BW 50kHZ. |
MAXIM - Dallas Semiconductor |
| 15 |
MAX4074BMESA |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 79V/V, noninverting gain 80V/V, -3dB BW 50kHZ. |
MAXIM - Dallas Semiconductor |
| 16 |
MAX4074BMEUK-T |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 79V/V, noniverting gain 80V/V, -3dB BW 50kHZ. |
MAXIM - Dallas Semiconductor |
| 17 |
MAX4075ANESA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 8V/V, noninverting gain 9V/V, -3dB BW 50kHz. |
MAXIM - Dallas Semiconductor |
| 18 |
MAX4075ANEUA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 8V/V, noninverting gain 9V/V, -3dB BW 50kHZ. |
MAXIM - Dallas Semiconductor |
| 19 |
MAX4075BJESA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 49V/V, noninverting gain 50V/V, -3dB BW 50kHz. |
MAXIM - Dallas Semiconductor |
| 20 |
MAX4075BJEUA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 49V/V, noninverting gain 50V/V, -3dB BW 50kHZ. |
MAXIM - Dallas Semiconductor |
| 21 |
MAX4075BMEUA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 79V/V, noninverting gain 80V/V, -3dB BW 50kHZ. |
MAXIM - Dallas Semiconductor |
| 22 |
MJ13335 |
20A NPN silicon power transistor 175W 500V |
Motorola |
| 23 |
MRF164W |
20W 500MHz TMOS Broadband Power FET N-Channel Enhancement Mode |
Motorola |
| 24 |
MTP75N05HD |
TMOS POWER FET 75 AMPERES RDS(on) = 9.5 mW 50 VOLTS |
Motorola |
| 25 |
SD1505 |
1.2-1.4GHz 150W 50V RF transistor designed for high power pulse at L-BAND |
SGS Thomson Microelectronics |
| 26 |
SD1507 |
1.2-1.4GHz 285W 50V RF transistor designed for High Power pulse at L-BAND |
SGS Thomson Microelectronics |
| 27 |
SD1920 |
2-200MHz 150W 50V HF/VHF N-Channel Power MOSFET |
SGS Thomson Microelectronics |
| 28 |
SD1920-2 |
2-200MHz 300W 50V HF/VHF N-Channel Power MOSFET |
SGS Thomson Microelectronics |
| 29 |
SD2951-10 |
250W 50V HF/VHF DMOS TRANSISTOR |
ST Microelectronics |
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