| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
| 2 |
1616-050 |
High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT |
SGS Thomson Microelectronics |
| 3 |
2N6040 |
Darlington 8A plastic complementary medium-power PNP 75W transistor |
Motorola |
| 4 |
2N6041 |
Darlington 8A plastic complementary medium-power PNP 75W transistor |
Motorola |
| 5 |
2N6042 |
Darlington 8A plastic complementary medium-power PNP 75W transistor |
Motorola |
| 6 |
2N6043 |
Darlington 8A plastic complementary medium-power NPN 75W transistor |
Motorola |
| 7 |
2N6044 |
Darlington 8A plastic complementary medium-power NPN 75W transistor |
Motorola |
| 8 |
2N6045 |
Darlington 8A plastic complementary medium-power NPN 75W transistor |
Motorola |
| 9 |
AM1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
| 10 |
AM1616-050 |
High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT |
SGS Thomson Microelectronics |
| 11 |
HUF75333G3 |
Power dissipation 111 W Transistor polarity N Channel Current Id cont. 56 A Pitch lead 5.45 mm Voltage Vds max 55 V Resistance Rds on 0.016 R Temperature current 25 ?C Temperature power 25 ?C |
Fairchild Semiconductor |
| 12 |
NDH833N |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.1 A Voltage Vgs th max. 2.7 V Voltage Vds max 20 V |
Fairchild Semiconductor |
| 13 |
NDH8436 |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 5.8 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Fairchild Semiconductor |
| 14 |
NDH853N |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Fairchild Semiconductor |
| 15 |
NDH854P |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 5.1 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Fairchild Semiconductor |
| 16 |
NSDU45 |
NPN Silicon Power Darlington 10W Transistor |
National Semiconductor |
| 17 |
NSDU45A |
NPN Silicon Power Darlington 10W Transistor |
National Semiconductor |
| 18 |
STE250N06 |
Length/Height 12.2 mm Width 25.4 mm Depth 38 mm Power dissipation 450 W Transistor polarity N Channel Centres fixing 31.6 mm Current Id cont. 250 A Current Idm pulse 750 A Voltage isolation 2.5 kV |
SGS Thomson Microelectronics |
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