No. |
Part Name |
Description |
Manufacturer |
1 |
1N4148W-G |
Discrete Devices-Diode-Switching Diode & Array |
Taiwan Semiconductor |
2 |
1N459 |
Glass passivated silicon switching diode with high breaking voltage, marking using plain text or color rings yellow-green-white |
Texas Instruments |
3 |
5962-9203301MPA |
Low-Gain Op Amp with Fast 14-bit Settling |
National Semiconductor |
4 |
5962-9203301MPA |
Low-Gain Op Amp with Fast 14-bit Settling |
National Semiconductor |
5 |
AT73C204 |
The AT73C204 provides an integrated power management solution for the add-on features in new-generation mobile phones. These features include a camera module, sound system for polyphonic ringing tones, memory module for downloaded MP3 file |
Atmel |
6 |
BAV19W-G |
Discrete Devices-Diode-Switching Diode & Array |
Taiwan Semiconductor |
7 |
BAV20W-G |
Discrete Devices-Diode-Switching Diode & Array |
Taiwan Semiconductor |
8 |
BAV21W-G |
Discrete Devices-Diode-Switching Diode & Array |
Taiwan Semiconductor |
9 |
BC846AW-G |
Small Signal Transistor, VCBO=80V, VCEO=65V, VEBO=6V, IC=0.1A |
Comchip Technology |
10 |
BC846BW-G |
Small Signal Transistor, VCBO=80V, VCEO=65V, VEBO=6V, IC=0.1A |
Comchip Technology |
11 |
BC847AW-G |
Small Signal Transistor, VCBO=50V, VCEO=45V, VEBO=6V, IC=0.1A |
Comchip Technology |
12 |
BC847BW-G |
Small Signal Transistor, VCBO=50V, VCEO=45V, VEBO=6V, IC=0.1A |
Comchip Technology |
13 |
BC847CW-G |
Small Signal Transistor, VCBO=50V, VCEO=45V, VEBO=6V, IC=0.1A |
Comchip Technology |
14 |
BC848AW-G |
Small Signal Transistor, VCBO=30V, VCEO=30V, VEBO=5V, IC=0.1A |
Comchip Technology |
15 |
BC848BW-G |
Small Signal Transistor, VCBO=30V, VCEO=30V, VEBO=5V, IC=0.1A |
Comchip Technology |
16 |
BC848CW-G |
Small Signal Transistor, VCBO=30V, VCEO=30V, VEBO=5V, IC=0.1A |
Comchip Technology |
17 |
BC856AW-G |
Small Signal Transistor, VCBO=-80V, VCEO=-65V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
18 |
BC856BW-G |
Small Signal Transistor, VCBO=-80V, VCEO=-65V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
19 |
BC856CW-G |
Small Signal Transistor, VCBO=-80V, VCEO=-65V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
20 |
BC857AW-G |
Small Signal Transistor, VCBO=-50V, VCEO=-45V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
21 |
BC857BW-G |
Small Signal Transistor, VCBO=-50V, VCEO=-45V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
22 |
BC857CW-G |
Small Signal Transistor, VCBO=-50V, VCEO=-45V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
23 |
BC858AW-G |
Small Signal Transistor, VCBO=-30V, VCEO=-30V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
24 |
BC858BW-G |
Small Signal Transistor, VCBO=-30V, VCEO=-30V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
25 |
BC858CW-G |
Small Signal Transistor, VCBO=-30V, VCEO=-30V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
26 |
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
27 |
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
28 |
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
29 |
BGA427 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) |
Siemens |
30 |
BQ34Z100PW-G1 |
Multi-Chemistry Impedance Track Standalone Fuel Gauge | Battery Gas Gauge 14-TSSOP -40 to 85 |
Texas Instruments |
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