| No. |
Part Name |
Description |
Manufacturer |
| 1 |
30KW156 |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2 |
30KW156A |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3 |
BAW156 |
Switching Diodes |
Diodes |
| 4 |
BAW156 |
General Purpose Diodes - Silicon Low Leakage Diode Array |
Infineon |
| 5 |
BAW156 |
SWITCHING DIODES |
Micro Commercial Components |
| 6 |
BAW156 |
Low-leakage double diode |
Nexperia |
| 7 |
BAW156 |
Low-leakage double diode |
NXP Semiconductors |
| 8 |
BAW156 |
Low-leakage double diode |
Philips |
| 9 |
BAW156 |
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Common anode) |
Siemens |
| 10 |
BAW156-7-F |
Switching Diodes |
Diodes |
| 11 |
BAW156HM |
Switching Diode (Low leakage) |
ROHM |
| 12 |
BAW156HMFH |
Switching Diode (Low leakage) (corresponds to AEC-Q101) |
ROHM |
| 13 |
BAW156HMFHT116 |
Switching Diode (Low leakage) (corresponds to AEC-Q101) |
ROHM |
| 14 |
BAW156HMT116 |
Switching Diode (Low leakage) |
ROHM |
| 15 |
BAW156LT1 |
Monolithic Dual Switching Diode |
Leshan Radio Company |
| 16 |
BAW156T |
Switching Diodes |
Diodes |
| 17 |
BAW156T-7-F |
Switching Diodes |
Diodes |
| 18 |
FW156 |
Pch+Pch |
SANYO |
| 19 |
W156 |
Spread Spectrum FTG for VIA MVP4 |
Cypress |
| | | |
