| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ATV02W181-HF |
Halogen Free Transient Voltage Suppressor (TVS) Diodes, PPPM=200Watts, VRWM=180V, Tolerance=5% |
Comchip Technology |
| 2 |
ATV02W181B-HF |
Halogen Free Transient Voltage Suppressor (TVS) Diodes, PPPM=200Watts, VRWM=180V, Tolerance=5% |
Comchip Technology |
| 3 |
EETHC2W181HJ |
Aluminum Electrolytic Capacitors (Radial Lead Type) HC-TS |
Panasonic |
| 4 |
EETHC2W181KJ |
Aluminum Electrolytic Capacitors (Radial Lead Type) HC-TS |
Panasonic |
| 5 |
ERG12SJW181E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 6 |
ERG1SGW181E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 7 |
ERG1SJW181E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 8 |
ERG2SGW181E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 9 |
ERG2SJW181E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 10 |
ERG3SGW181E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 11 |
ERG3SJW181E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 12 |
ERQ12AJW181E |
Leaded Metal Film Fusing Resistor |
Panasonic |
| 13 |
ERQ14AJW181E |
Leaded Metal Film Fusing Resistor |
Panasonic |
| 14 |
HM51W18165J-6 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 15 |
HM51W18165J-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 16 |
HM51W18165LJ-5 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 17 |
HM51W18165LJ-6 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 18 |
HM51W18165LJ-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 19 |
HM51W18165LTT-5 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 20 |
HM51W18165LTT-6 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 21 |
HM51W18165LTT-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 22 |
HM51W18165TT-5 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 23 |
HM51W18165TT-6 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 24 |
HM51W18165TT-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 25 |
MHW1810_D |
MHW1810-1, MHW1810-2 1805-1880 MHz, 10 W RF Power LDMOS Amplifiers - Archived |
Motorola |
| 26 |
MHW1810_D |
MHW1810-1, MHW1810-2 1805-1880 MHz, 10 W RF Power LDMOS Amplifiers - Archived |
Motorola |
| 27 |
MHW1810_D |
MHW1810-1, MHW1810-2 1805-1880 MHz, 10 W RF Power LDMOS Amplifiers - Archived |
Motorola |
| 28 |
MHW1815 |
Microwave Bipolar Power Amplifier |
Motorola |
| 29 |
MHW1815_D |
MHW1815 1805-1880 MHz, 15 W, 26 V, 32 dB RF Microwave Bipolar Power Amplifier - Archived |
Motorola |
| 30 |
MHW1815_D |
MHW1815 1805-1880 MHz, 15 W, 26 V, 32 dB RF Microwave Bipolar Power Amplifier - Archived |
Motorola |
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