| No. |
Part Name |
Description |
Manufacturer |
| 1 |
05W22 |
05W 05WS SERIES ZENER DIODES |
Leshan Radio Company |
| 2 |
15KW220 |
220.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 3 |
15KW220A |
220.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 4 |
AQW224N |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
| 5 |
AQW224NA |
PhotoMOS relay, FR (radio frequency) type, [2-channel (form A) type] low on resistance. AC/DC type. Output rating: load voltage 400 V, load current 40 mA. surface-mount terminal, tube packing style. |
Matsushita Electric Works(Nais) |
| 6 |
AQW224NAX |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
| 7 |
AQW224NAZ |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
| 8 |
AQW225N |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
| 9 |
AQW225NA |
PhotoMOS relay, FR (radio frequency) type, [2-channel (form A) type] low on resistance. AC/DC type. Output rating: load voltage 80 V, load current 120 mA. surface-mount terminal, tube packing style. |
Matsushita Electric Works(Nais) |
| 10 |
AQW225NAX |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
| 11 |
AQW225NAZ |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
| 12 |
AQW227N |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
| 13 |
AQW227NA |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
| 14 |
AQW227NAX |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
| 15 |
AQW227NAZ |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
| 16 |
ATV02W220-HF |
Halogen Free Transient Voltage Suppressor (TVS) Diodes, PPPM=200Watts, VRWM=22V, Tolerance=5% |
Comchip Technology |
| 17 |
ATV02W220B-HF |
Halogen Free Transient Voltage Suppressor (TVS) Diodes, PPPM=200Watts, VRWM=22V, Tolerance=5% |
Comchip Technology |
| 18 |
BAW222 |
Diodes for high speed switching applications |
Infineon |
| 19 |
BDW22 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 20 |
BDW22 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 21 |
BDW22A |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 22 |
BDW22A |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 23 |
BDW22B |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 24 |
BDW22B |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 25 |
BDW22C |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 26 |
BDW22C |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 27 |
BLW22 |
RF Power transistor |
Texas Instruments |
| 28 |
BLW22 |
VHF Power transistor |
Texas Instruments |
| 29 |
BSW22 |
Silicon low power general purpose PNP transistor - metal case |
IPRS Baneasa |
| 30 |
BSW22 |
Silicon transistor for switching applications PNP |
IPRS Baneasa |
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