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Datasheets found :: 4
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No. | Part Name | Description | Manufacturer |
---|---|---|---|
1 | 30KW258 | 258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
2 | 30KW258A | 258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE Semiconductor |
3 | FDW258P | P-Channel 1.8V Specified PowerTrench MOSFET | Fairchild Semiconductor |
4 | FDW258P_Q | P-Channel 1.8V Specified PowerTrench MOSFET | Fairchild Semiconductor |
Datasheets found :: 4
Page:
| 1 |
|