| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0033 |
FET INPUT HIGH SPEED VOLTAGE FOLLOWER/BUFFER AMPLIFIER |
M.S. Kennedy Corp. |
| 2 |
0105-125 |
500MHz 28V 100W NPN RF power transistor for wideband VHF-UHF class C applications |
SGS Thomson Microelectronics |
| 3 |
03N70P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Advanced Power Technology |
| 4 |
03N70P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Advanced Power Technology |
| 5 |
03P2J |
300mA Power mini-mold SCR |
NEC |
| 6 |
03P2J-T1 |
300mA Power mini-mold SCR |
NEC |
| 7 |
03P2J-T2 |
300mA Power mini-mold SCR |
NEC |
| 8 |
03P4J |
300mA power mini-mold SCR |
NEC |
| 9 |
03P4J-T1 |
300mA power mini-mold SCR |
NEC |
| 10 |
03P4J-T2 |
300mA power mini-mold SCR |
NEC |
| 11 |
03P5J |
300mA Power mini-mold SCR |
NEC |
| 12 |
03P5J-T1 |
300mA Power mini-mold SCR |
NEC |
| 13 |
03P5J-T2 |
300mA Power mini-mold SCR |
NEC |
| 14 |
0405-100 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W |
SGS Thomson Microelectronics |
| 15 |
0405-30 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W |
SGS Thomson Microelectronics |
| 16 |
0510-10 |
20 W, 28 V, 500-1000 MHz, UHF emitter silicon power transistor |
Acrian |
| 17 |
0510-10-2 |
20 W, 28 V, 500-1000 MHz, UHF emitter silicon power transistor |
Acrian |
| 18 |
05NH46 |
FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 19 |
05NU41 |
SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 20 |
05NU42 |
SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 21 |
0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
| 22 |
0724_XP132A1275SR |
Power MOS FET |
Torex Semiconductor |
| 23 |
0770_XP152A01D8MR |
Power MOS FET |
Torex Semiconductor |
| 24 |
0782_XP161A0390PR |
Power MOS FET |
Torex Semiconductor |
| 25 |
0783_XP161A11A1PR |
Power MOS FET |
Torex Semiconductor |
| 26 |
0785_XP161A1355PR |
POWER MOSFET |
Torex Semiconductor |
| 27 |
0790_XP162A01B5PR |
Power MOS FET |
Torex Semiconductor |
| 28 |
0790_XP162A01B5PR |
Power MOS FET |
Torex Semiconductor |
| 29 |
08090 |
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
Infineon |
| 30 |
0910-150M |
Pulsed Power ≤ 1 Ghz |
Microsemi |
| | | |
