| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1SS268 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 2 |
1SS269 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 3 |
1SS312 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 4 |
1SS313 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 5 |
1SS314 |
Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch Applications |
TOSHIBA |
| 6 |
1SS364 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 7 |
1SS381 |
Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch Applications |
TOSHIBA |
| 8 |
1SV307 |
Diode Silicon Epitaxial Pin Type VHF Tuner Band Switch Applications |
TOSHIBA |
| 9 |
1SV308 |
Diode Silicon Epitaxial Pin Type VHF Tuner Band Switch Applications |
TOSHIBA |
| 10 |
2N1118 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 11 |
2N1118A |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 12 |
2N1119A |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 13 |
2N1420 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 14 |
2N1429 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 15 |
2N1613 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 16 |
2N1613 |
NPN silicon planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 17 |
2N1711 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 18 |
2N1889 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 19 |
2N1890 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 20 |
2N1893 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 21 |
2N2193A |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 22 |
2N2297 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 23 |
2N2377 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 24 |
2N2378 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 25 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
| 26 |
2N495 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 27 |
2N496 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 28 |
2N697 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 29 |
2N858 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 30 |
2N859 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
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