Datasheets for WORD

Datasheets found :: 12867

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No.	Part Name	Description	Manufacturer
1	-7L	536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM	Mitsubishi Electric Corporation
2	-8	536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM	Mitsubishi Electric Corporation
3	-8L	536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM	Mitsubishi Electric Corporation
4	28F160S3	WORD-WIDE FlashFile MEMORY FAMILY	Intel
5	28F160S5	WORD-WIDE FlashFile MEMORY FAMILY	Intel
6	28F160S5	WORD-WIDE FlashFile MEMORY FAMILY	Intel
7	28F320S3	WORD-WIDE FlashFile MEMORY FAMILY	Intel
8	28F320S5	WORD-WIDE FlashFile MEMORY FAMILY	Intel
9	28F320S5	WORD-WIDE FlashFile MEMORY FAMILY	Intel
10	28LV64A	Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28LV64A is a 64K bit CMOS Parallel EEPROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycle	Microchip
11	37LV128	Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV128 is a Serial OTP EPROM device organized internally in a x32 configuration with 131,072 bits and 4096x32 programming word. The 37LV128 is suitable fo	Microchip
12	37LV36	Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 36,288 bits and 1134x32 programming word. The 37LV36 is suitable for m	Microchip
13	37LV65	Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 65,536 bits and 2048x32 programming word. The 37LV36 is suitable for m	Microchip
14	4036BP	4 word x 8 bit static RAM (binary addressing)	TOSHIBA
15	4039BP	4 word x 8 bit static RAM (direct word-line addressing)	TOSHIBA
16	4039BP	4 word x 8 bit static RAM (direct word-line addressing)	TOSHIBA
17	50S116T-5	High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA	Ceramate
18	50S116T-6	High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA	Ceramate
19	50S116T-7	High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA	Ceramate
20	54S416T-5	High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA	Ceramate
21	54S416T-6	High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA	Ceramate
22	54S416T-7	High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA	Ceramate
23	5962F1120101QXA	72-Mbit QDR� II+ SRAM Two-Word Burst Architecture with RadStop™ Technology	Cypress
24	5962F1120101VXA	72-Mbit QDR� II+ SRAM Two-Word Burst Architecture with RadStop™ Technology	Cypress
25	5962F1120102QXA	72-Mbit QDR� II+ SRAM Four-Word Burst Architecture with RadStop™ Technology	Cypress
26	5962F1120102VXA	72-Mbit QDR� II+ SRAM Four-Word Burst Architecture with RadStop™ Technology	Cypress
27	5962F1120201QXA	72-Mbit QDR� II+ SRAM Two-Word Burst Architecture with RadStop™ Technology	Cypress
28	5962F1120202QXA	72-Mbit QDR� II+ SRAM Four-Word Burst Architecture with RadStop™ Technology	Cypress
29	7403	4-Bit x 64-word FIFO register; 3-state	Philips
30	74170PC	16-bit register file, organized as 4 words of 4 bits each	TUNGSRAM

Datasheets found :: 12867

Page: | 1 | 2 | 3 | 4 | 5 |