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Datasheets for X 18

Datasheets found :: 7090
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 5962-9470401QXA 512 x 18 x 2 Synchronous Bidirectional FIFO Memory Texas Instruments
2 5962-9562701NXD 1024 x 18 Synchronous FIFO Memory Texas Instruments
3 5962-9650901QXA 512 x 18 x 2 bidirectional asynchronous FIFO memory Texas Instruments
4 5962R-0323501QUA 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). Aeroflex Circuit Technology
5 5962R-0323501QUC 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). Aeroflex Circuit Technology
6 5962R-0323501QUX 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). Aeroflex Circuit Technology
7 5962R-0323501VUA 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). Aeroflex Circuit Technology
8 5962R-0323501VUC 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). Aeroflex Circuit Technology
9 5962R-0323501VUX 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). Aeroflex Circuit Technology
10 5962R-0323502QUA 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). Aeroflex Circuit Technology
11 5962R-0323502QUC 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). Aeroflex Circuit Technology
12 5962R-0323502QUX 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). Aeroflex Circuit Technology
13 5962R-0323502VUA 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). Aeroflex Circuit Technology
14 5962R-0323502VUC 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). Aeroflex Circuit Technology
15 5962R-0323502VUX 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). Aeroflex Circuit Technology
16 A65H73361 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output AMIC Technology
17 A65H73361 SERIES 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output AMIC Technology
18 A65H73361P-5 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output AMIC Technology
19 A65H73361P-6 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output AMIC Technology
20 A65H73361P-7 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output AMIC Technology
21 A65H83181 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output AMIC Technology
22 A65H83181 SERIES 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output AMIC Technology
23 A65H83181P-5 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output AMIC Technology
24 A65H83181P-6 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output AMIC Technology
25 A65H83181P-7 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output AMIC Technology
26 A67L8318E-4.5 Cycle time:8.50ns;accesstime:4.5ns 256K x 18 LVTTL, pipelined DBA SRAM AMIC Technology
27 AS5SS256K18 256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through Austin Semiconductor
28 AS5SS256K18DQ-10_IT 256K x 18 SSRAM - synchronous burst SRAM, flow-thru Austin Semiconductor
29 AS5SS256K18DQ-10_XT 256K x 18 SSRAM - synchronous burst SRAM, flow-thru Austin Semiconductor
30 AS5SS256K18DQ-8_IT 256K x 18 SSRAM - synchronous burst SRAM, flow-thru Austin Semiconductor


Datasheets found :: 7090
Page: | 1 | 2 | 3 | 4 | 5 |



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