No. |
Part Name |
Description |
Manufacturer |
1 |
5962-9470401QXA |
512 x 18 x 2 Synchronous Bidirectional FIFO Memory |
Texas Instruments |
2 |
5962-9562701NXD |
1024 x 18 Synchronous FIFO Memory |
Texas Instruments |
3 |
5962-9650901QXA |
512 x 18 x 2 bidirectional asynchronous FIFO memory |
Texas Instruments |
4 |
5962R-0323501QUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
5 |
5962R-0323501QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
6 |
5962R-0323501QUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
7 |
5962R-0323501VUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
8 |
5962R-0323501VUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
9 |
5962R-0323501VUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
10 |
5962R-0323502QUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
11 |
5962R-0323502QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
12 |
5962R-0323502QUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
13 |
5962R-0323502VUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
14 |
5962R-0323502VUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
15 |
5962R-0323502VUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
16 |
A65H73361 |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output |
AMIC Technology |
17 |
A65H73361 SERIES |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output |
AMIC Technology |
18 |
A65H73361P-5 |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output |
AMIC Technology |
19 |
A65H73361P-6 |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output |
AMIC Technology |
20 |
A65H73361P-7 |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output |
AMIC Technology |
21 |
A65H83181 |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output |
AMIC Technology |
22 |
A65H83181 SERIES |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output |
AMIC Technology |
23 |
A65H83181P-5 |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output |
AMIC Technology |
24 |
A65H83181P-6 |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output |
AMIC Technology |
25 |
A65H83181P-7 |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output |
AMIC Technology |
26 |
A67L8318E-4.5 |
Cycle time:8.50ns;accesstime:4.5ns 256K x 18 LVTTL, pipelined DBA SRAM |
AMIC Technology |
27 |
AS5SS256K18 |
256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through |
Austin Semiconductor |
28 |
AS5SS256K18DQ-10_IT |
256K x 18 SSRAM - synchronous burst SRAM, flow-thru |
Austin Semiconductor |
29 |
AS5SS256K18DQ-10_XT |
256K x 18 SSRAM - synchronous burst SRAM, flow-thru |
Austin Semiconductor |
30 |
AS5SS256K18DQ-8_IT |
256K x 18 SSRAM - synchronous burst SRAM, flow-thru |
Austin Semiconductor |
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