| No. |
Part Name |
Description |
Manufacturer |
| 1 |
A43L0616AV-5.5 |
5.5ns; 183MHz/CL=3; 143MHz/CL=2; 512K x 16bit x 2banks synchronous DRAM |
AMIC Technology |
| 2 |
A43L8316AV-5 |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM |
AMIC Technology |
| 3 |
A43L8316AV-5.5 |
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM |
AMIC Technology |
| 4 |
A43L8316AV-6 |
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM |
AMIC Technology |
| 5 |
A43L8316AV-7 |
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM |
AMIC Technology |
| 6 |
HY57V648010TC-10 |
4Mbit x 2bank x 8 SDRAM, LVTTL, 100ns |
Hynix Semiconductor |
| 7 |
HY57V648010TC-12 |
4Mbit x 2bank x 8 SDRAM, LVTTL, 120ns |
Hynix Semiconductor |
| 8 |
HY57V648010TC-15 |
4Mbit x 2bank x 8 SDRAM, LVTTL, 150ns |
Hynix Semiconductor |
| 9 |
HY57V648011TC-10 |
4Mbit x 2bank x 8 SDRAM, SSTL, 100ns |
Hynix Semiconductor |
| 10 |
HY57V648011TC-7 |
4Mbit x 2bank x 8 SDRAM, SSTL, 70ns |
Hynix Semiconductor |
| 11 |
HY57V648011TC-8 |
4Mbit x 2bank x 8 SDRAM, SSTL, 80ns |
Hynix Semiconductor |
| 12 |
HY57V658010TC-10 |
4Mbit x 2bank x 8 SDRAM, LVTTL, 100ns |
Hynix Semiconductor |
| 13 |
HY57V658010TC-12 |
4Mbit x 2bank x 8 SDRAM, LVTTL, 120ns |
Hynix Semiconductor |
| 14 |
HY57V658010TC-15 |
4Mbit x 2bank x 8 SDRAM, LVTTL, 150ns |
Hynix Semiconductor |
| 15 |
HY57V658011TC-10 |
4Mbit x 2bank x 8 SDRAM, SSTL, 100ns |
Hynix Semiconductor |
| 16 |
HY57V658011TC-7 |
4Mbit x 2bank x 8 SDRAM, SSTL, 70ns |
Hynix Semiconductor |
| 17 |
HY57V658011TC-8 |
4Mbit x 2bank x 8 SDRAM, SSTL, 80ns |
Hynix Semiconductor |
| 18 |
M12L16161A |
512K x 16Bit x 2Banks Synchronous DRAM |
etc |
| 19 |
M12L16161A-4.3T |
512K x 16Bit x 2Banks Synchronous DRAM |
etc |
| 20 |
M12L16161A-5.5T |
512K x 16Bit x 2Banks Synchronous DRAM |
etc |
| 21 |
M12L16161A-5T |
512K x 16Bit x 2Banks Synchronous DRAM |
etc |
| 22 |
M12L16161A-6T |
512K x 16Bit x 2Banks Synchronous DRAM |
etc |
| 23 |
M12L16161A-7T |
512K x 16Bit x 2Banks Synchronous DRAM |
etc |
| 24 |
M12L16161A-8T |
512K x 16Bit x 2Banks Synchronous DRAM |
etc |
| 25 |
MT8930C |
4 wire full-duplex 2B+D (192Kb/s) data format ISDN S and T Subscriber Network Interface Circuit with controllerless mode |
Zarlink Semiconductor |
| 26 |
MT8931C |
4 wire full-duplex 2B+D (192Kb/s) data format ISDN S and T Subscriber Network Interface Circuit |
Zarlink Semiconductor |
| 27 |
MT9171 |
2 wire full-duplex 2B+D (80/160Kb/s) data format Digital Subscriber Network Interface Circuit (range up to 3KM) |
Zarlink Semiconductor |
| 28 |
MT9172 |
2 wire full-duplex 2B+D (80/160Kb/s) data format Digital Subscriber Network Interface Circuit (range up to 4KM) |
Zarlink Semiconductor |
| 29 |
MT9173 |
2 wire full-duplex 2B+D (80/160Kb/s) data format Digital Subscriber Network Interface Circuit (range up to 3KM) with loop lengh measurement capability for wireless base station applications |
Zarlink Semiconductor |
| 30 |
MT9174 |
2 wire full-duplex 2B+D (80/160Kb/s) data format Digital Subscriber Network Interface Circuit (range up to 4Km) with loop length measurement capability for wireless base stations |
Zarlink Semiconductor |
| | | |
