No. |
Part Name |
Description |
Manufacturer |
1 |
2363 |
4.32 x 4.91 mm Elliptical Wide Angle LEDs |
Everlight Electronics |
2 |
3341 |
64 x 4 FIFO Serial Memory |
Advanced Micro Devices |
3 |
3341 |
64 x 4 FIFO Serial Memory |
Fairchild Semiconductor |
4 |
42S16400A |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
5 |
42S32200 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
6 |
54170 |
4 x 4 register file (With Open-Collector Outputs) |
Fairchild Semiconductor |
7 |
54170DMQB |
7 V, 4 x 4 register file woth open-collector output |
National Semiconductor |
8 |
54170FMQB |
7 V, 4 x 4 register file woth open-collector output |
National Semiconductor |
9 |
54F410 |
Register Stack 16 x 4 RAM TRI-STATE Output Register |
National Semiconductor |
10 |
54F410DM |
Register Stack��16 x 4 RAM TRI-STATEE Output Register |
National Semiconductor |
11 |
54F410DMQB |
Register Stack 16 x 4 RAM TRI-STATE Output Register [Life-time buy] |
National Semiconductor |
12 |
54F410DMQB |
Register Stack 16 x 4 RAM TRI-STATE Output Register [Life-time buy] |
National Semiconductor |
13 |
54F410LM |
Register Stack��16 x 4 RAM TRI-STATEE Output Register |
National Semiconductor |
14 |
54F413 |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
15 |
54F413D-CQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
16 |
54F413D-CQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
17 |
54F413D-MQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
18 |
54F413DM |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
19 |
54F413DMQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
20 |
54F413DMQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
21 |
54F413MW8 |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
22 |
54F413P-CQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
23 |
54F413P-MQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
24 |
54LS170 |
4 x 4 register file (With Open-Collector Outputs) |
Fairchild Semiconductor |
25 |
54LS670 |
4 x 4 Register File (With 3-State Outputs) |
Fairchild Semiconductor |
26 |
54S416T |
1M x 4 Banks x 16 BITS SDRAM |
Ceramate |
27 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
28 |
54S416T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
29 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
30 |
74170 |
4 x 4 register file (With Open-Collector Outputs) |
Fairchild Semiconductor |
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